Photoluminescence studies of arsenic-doped Hg1-xCdxTe epilayers

Robin, I. C.; Taupin, M.; Derone, R.; Solignac, A.; Ballet, P.; Lusson, A.
November 2009
Applied Physics Letters;11/16/2009, Vol. 95 Issue 20, p202104
Academic Journal
Arsenic incorporation in HgCdTe epilayers has been achieved with a nonconventional radio frequency plasma source during molecular beam epitaxial growth. Photoluminescence studies were carried out on HgCdTe arsenic-doped samples. Measurements were done on the as-grown sample, after a Hg vacancy filling annealing and after a 400 °C activation annealing under Hg pressure. A comparison with extended x-ray absorption fine structure results allows us to assign the observed optical transitions to the Hg vacancies, As2Te3 glass and AsHg dopants. An optical signature of the arsenic site transfer upon activation annealing is found.


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