Bipolar resistive switching in individual Au–NiO–Au segmented nanowires

Herderick, Edward D.; Reddy, Kongara M.; Sample, Rachel N.; Draskovic, Thomas I.; Padture, Nitin P.
November 2009
Applied Physics Letters;11/16/2009, Vol. 95 Issue 20, p203505
Academic Journal
Evidence for bipolar resistive switching is reported in individual metal-oxide-metal (MOM) nanowires in the system Au–NiO–Au, and a plausible mechanism for the same is presented. The MOM nanowire architecture may be well suited for much needed fundamental studies of resistive switching because it provides (i) high-quality end-on contacts, (ii) control over the dimensions of the oxide, (iii) ability to synthesize a very large number of nearly identical nanowires in a wide variety of MOM systems, and (iv) elimination of substrate-induced strain effects.


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