Study of multi-ON states in nonvolatile memory based on metal-insulator-metal structure

Yang, Guanwen; Chen, Hsiang-Yu; Ma, Liping; Shao, Yue; Yang, Yang
November 2009
Applied Physics Letters;11/16/2009, Vol. 95 Issue 20, p203506
Academic Journal
Various mechanisms have been proposed to interpret switching effect in thermally evaporated organic memory devices. In this work, we demonstrate a nonvolatile memory device having tristates, one OFF state and two different ON states (lower-ON state, higher-ON state) in the metal-insulator-metal (MIM) structure. Detailed study has revealed that different switching mechanisms are responsible for these two stages of switching: filament formation is the dominant mechanism for switching from the OFF state to the lower ON state while Poole–Frenkel effect governs the switching from the lower-ON state to the higher-ON state.


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