TITLE

Aggregates-induced dynamic negative differential resistance in conducting organic films

AUTHOR(S)
Xie, Xian Ning; Wang, Junzhong; Loh, Kian Ping; Wee, Andrew Thye Shen
PUB. DATE
November 2009
SOURCE
Applied Physics Letters;11/16/2009, Vol. 95 Issue 20, p203302
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
This letter reports the negative differential resistance (NDR) behavior of perylene-3,4,9,10-tetracarboxylic-3,4,9,10-dianhydride films induced by aggregate formation in the film. It is observed that aggregate-states in the energy gap can by-pass the common charge conduction mode, and electron injection, trapping, and conduction through these states lead to the NDR characteristic. The rate-dependence of NDR is discussed in terms of the transit time and lifetime of the aggregates-states electrons. The quenching of NDR by photoillumination is also observed, and is attributed to the saturation of aggregates-states by photoelectrons.
ACCESSION #
45366472

 

Related Articles

  • Aluminum diffusion and reaction in thin films of perylene-3,4,9,10-tetracarboxylic dianhydride: Depth profiles and time-dependent diffusion coefficients. Yoshida, Hiroyuki; Sato, Naoki // Applied Physics Letters;10/1/2007, Vol. 91 Issue 14, p141915 

    Diffusion and reaction of aluminum metal species (Al) vacuum deposited on perylene-3,4,9,10-tetracarboxylic dianhydride (PTCDA) thin films were investigated using angle resolved x-ray photoemission spectroscopy. The acquired data were analyzed assuming that the diffusion of Al is described by a...

  • Perylene–rare-gas heteroclusters. II. Nuclear dynamics and spectral line shapes. Heidenreich, Andreas; Bahatt, Dar; Ben-Horin, Narda; Even, Uzi; Jortner, Joshua // Journal of Chemical Physics;5/1/1994, Vol. 100 Issue 9, p6300 

    In this paper we report on molecular dynamics simulations of the line shapes of the absorption spectra of perylene·Arn heteroclusters (n=1–45), which rest on the spectral density method. Inhomogeneous semiclassical absorption line shapes were calculated by averaging of microcanonical...

  • Optical and Electrical Properties of New Perylene Diimide Thin Films. Boobalan, G.; Imran, P.K.M.; Manoharan, C.; Nagarajan, S. // Journal of Electronic Materials;Oct2015, Vol. 44 Issue 10, p4000 

    Perylene diimides with high photosensitivity and high electron mobility have attracted much attention for use in organic semiconductor devices. In this investigation, thin films of six new perylene tetracarboxylic diimides (PTCDI) were fabricated by spin coating, on glass as substrate, and their...

  • Investigation of Al[sub x]Ga[sub y]In[sub 1-x-y]P as a Sckottky layer of AlInAs/GaInAs high.... Chough, K.B.; Caneau, C.; Hong, W.-P.; Song, J.-I. // Applied Physics Letters;1/10/1994, Vol. 64 Issue 2, p211 

    Examines the use of high band gap strained Al[sub x]Ga[sub y]In[sub 1-x-y]P as a Schottky layer of AlInAs/GaInAs high electron mobility transistors on indium phosphide. Impact of aluminum phosphide mole fraction content of Schottky layer on Schottky barrier height; Effect of the layer on gate...

  • Material properties of p-type GaAs at large dopings. Tiwari, Sandip; Wright, Steven L. // Applied Physics Letters;2/5/1990, Vol. 56 Issue 6, p563 

    We summarize the room-temperature minority-carrier mobility, minority-carrier lifetime, and effective band-gap shrinkage for p-type GaAs at large dopings, as determined from measurements on heterostructure bipolar transistors and published literature. The minority-carrier mobilities are...

  • Post growth annealing study on long wavelength infrared InAs/GaSb superlattices. Haugan, H. J.; Brown, G. J.; Elhamri, S.; Pacley, S.; Olson, B. V.; Boggess, T. F. // Journal of Applied Physics;Mar2012, Vol. 111 Issue 5, p053113 

    The impact of post growth annealing on the electrical properties of a long wavelength infrared type-II superlattice (SL) was explored. Quarters of a single SL wafer were annealed at 440 °C, 480 °C, and 515 °C, respectively for 30 min. Changes in the electrical properties were followed...

  • Effects of extrinsic point defects in phosphorene: B, C, N, O, and F adatoms. Gaoxue Wang; Pandey, Ravindra; Karna, Shashi P. // Applied Physics Letters;4/30/2015, Vol. 106 Issue 17, p1 

    Phosphorene is emerging as a promising 2D semiconducting material with a direct band gap and high carrier mobility. In this paper, we examine the role of the extrinsic point defects including surface adatoms in modifying the electronic properties of phosphorene using density functional theory....

  • Underestimating the width of the bandgap in the electronic spectra of La[sub 2]CuO[sub 4]. Avramov, P. V.; Ovchinnikov, S. G. // Physics of the Solid State;Mar97, Vol. 39 Issue 3, p389 

    It is shown that the width of the bandgap determined by the simultaneous analysis of the experimental photoelectron and inverse photoemission spectra of the surface of La[sub 2]CuO[sub 4] using a common energy scale is underestimated by 1 eV. The electronic and satellite structures of the...

  • Sensitization of Luminescence of Antimony(III) in Complexes with 6-Methylquinoline in the Spectral Region of the A Band. Storozhuk, T. V.; Mirochnik, A. G.; Petrochenkova, N. V.; Karasev, V. E. // Optics & Spectroscopy;Jun2003, Vol. 94 Issue 6, p920 

    The luminescence properties of complexes of antimony (III) halides with 6-methylquinoline: (C[SUB10]H[SUB9]NH)[SUB4] Sb[SUB2]Cl[SUB10] (I), (C[SUB10]H[SUB9]NH[SUB3] SbBr[SUB6] (II), and (C[SUB10]H[SUB9]NH)[SUB4] Sb[SUB2]I[SUB10] (III) are studied. From analysis of data obtained by UV,...

Share

Read the Article

Courtesy of VIRGINIA BEACH PUBLIC LIBRARY AND SYSTEM

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics