Fabrication of a transparent and flexible thin film transistor based on single-walled carbon nanotubes using the direct transfer method

Tseng, S. H.; Tai, N. H.
November 2009
Applied Physics Letters;11/16/2009, Vol. 95 Issue 20, p204104
Academic Journal
The fabrication of transparent and flexible thin film transistors (TFTs), using single-walled carbon nanotube (SWCNT) networks as bottom gates and conducting channels and polymethylmethacrylate (PMMA) as an insulating layer, by the direct transfer method is demonstrated. The fabricated SWCNT-TFTs exhibited a mobility of 23.4 cm2/V s and an ON/OFF current ratio of ∼103. A minor decrease of ∼7% on the performance of the SWCNT-TFTs after bending to a radius of curvature of ∼6 mm was observed. The differences in performance of the devices fabricated with SWCNTs on SiO2/Si and those prepared by transferring SWCNTs onto a polycarbonate substrate are also discussed.


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