Photoluminescence enhancement of Er-doped silica containing Ge nanoclusters

Guzman, J.; Shin, S. J.; Liao, C. Y.; Yuan, C. W.; Stone, P. R.; Dubón, O. D.; Yu, K. M.; Beeman, J. W.; Watanabe, M.; Ager, J. W.; Chrzan, D. C.; Haller, E. E.
November 2009
Applied Physics Letters;11/16/2009, Vol. 95 Issue 20, p201904
Academic Journal
The photoluminescence (PL) of Er-doped silica films containing Ge nanoclusters synthesized by ion implantation was investigated. The area of the 1540 nm Er3+ PL peak was enhanced by up to a factor of 200 by the addition of Ge nanoclusters. The PL enhancement was found to be proportional to the concentration of Ge atoms. Control experiments with argon ion implantation were used to show that the enhancement is due to the presence of Ge and not radiation damage. Furthermore, the Er3+ PL was found to be strongly influenced by the postgrowth annealing and the crystallinity of the Ge nanoclusters.


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