TITLE

Reduced hole injection barrier for achieving ultralow voltage polymer space-charge-limited transistor with a high on/off current ratio

AUTHOR(S)
Chao, Yu-Chiang; Lin, Yi-Cheng; Dai, Min-Zhi; Zan, Hsiao-Wen; Meng, Hsin-Fei
PUB. DATE
November 2009
SOURCE
Applied Physics Letters;11/16/2009, Vol. 95 Issue 20, p203305
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Vertical polymer space-charge limited transistor (SCLT) operated with an ultralow voltage is demonstrated. The influence of aging effect of the oxygen plasma treated indium tin oxide electrode on the hole injection barrier and on the transistor characteristics is investigated. By reducing the hole injection barrier, the on/off ratio as high as 104 is obtained at a collector to emitter voltage as low as -0.84 V. The low operation voltage is crucial to the development of low-power large-area polymer transistor array. Inverter characteristics are also demonstrated by connecting a SCLT with a load resistor.
ACCESSION #
45366454

 

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