TITLE

Effects of well width and growth temperature on optical and structural characteristics of AlN/GaN superlattices grown by metal-organic chemical vapor deposition

AUTHOR(S)
Bayram, C.; Péré-laperne, N.; Razeghi, M.
PUB. DATE
November 2009
SOURCE
Applied Physics Letters;11/16/2009, Vol. 95 Issue 20, p201906
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
AlN/GaN superlattices (SLs) employing various well widths (from 1.5 to 7.0 nm) are grown by metal-organic chemical vapor deposition technique at various growth temperatures (TS) (from 900 to 1035 °C). The photoluminescence (PL), x-ray diffraction, and intersubband (ISB) absorption characteristics of these SLs and their dependency on well width and growth temperature are investigated. Superlattices with thinner wells (grown at the same TS) or grown at lower TS (employing the same well width) are shown to demonstrate higher strain effects leading to a higher PL energy and ISB absorption energy. Simulations are employed to explain the experimental observations. ISB absorptions from 1.04 to 2.15 μm are demonstrated via controlling well width and growth temperature.
ACCESSION #
45366445

 

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