TITLE

High contrast chiral nematic liquid crystal device using negative dielectric material

AUTHOR(S)
Su Seok Choi; Castles, Flynn; Morris, Stephen M.; Coles, Harry J.
PUB. DATE
November 2009
SOURCE
Applied Physics Letters;11/9/2009, Vol. 95 Issue 19, p193502
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
A liquid crystal device is demonstrated using a short-pitch (260 nm) chiral nematic with negative dielectric anisotropy. Due to dielectric coupling, an in-plane electric field switches the liquid crystal between the standing-helix (field-off, “dark” state) and lying-helix (field-on, transmissive state) configurations. We report experimental results on the optical transmission as a function of the applied field, the response time (as short as 35 microseconds) and the contrast ratio (1000:1).
ACCESSION #
45249215

 

Related Articles

  • High responsivity A-plane GaN-based metal-semiconductor-metal photodetectors for polarization-sensitive applications. Navarro, A.; Rivera, C.; Pereiro, J.; Muñoz, E.; Imer, B.; DenBaars, S. P.; Speck, J. S. // Applied Physics Letters;5/25/2009, Vol. 94 Issue 21, p213512 

    The fabrication and characterization of metal-semiconductor-metal polarization-sensitive photodetectors based on A-plane GaN grown on R-plane sapphire substrates is reported. These photodetectors take advantage of the in-plane crystal anisotropy, which results in linear dichroism near the band...

  • Monolithic vertical microcavities based on tetracene single crystals. Del Carro, Pompilio; Camposeo, Andrea; Persano, Luana; Tavazzi, Silvia; Campione, Marcello; Papagni, Antonio; Raimondo, Luisa; Silvestri, Leonardo; Spearman, Peter; Cingolani, Roberto; Pisignano, Dario // Applied Physics Letters;2/11/2008, Vol. 92 Issue 6, p063301 

    The authors report on monolithic, light-emitting vertical microcavities based on an organic semiconductor single crystal. The devices are realized by reactive electron-beam deposition of dielectric mirrors and growth of tetracene crystals by physical vapor transport. The microcavities exhibit...

  • The anisotropy of ac conductivity and dielectric constant of anisotropic conductor–insulator composites. Hazama, Yuichi; Nakamura, Jun; Natori, Akiko // Journal of Materials Science;Jun2010, Vol. 45 Issue 11, p2843 

    We study the complex ac admittance tensor (ac conductivity and dielectric constant) of anisotropic conductor–insulator composite materials, based on anisotropic two-dimensional RC-networks consisting of randomly placed conductors and capacitors with different conductor existence (bond...

  • OPTICAL AND ELECTRICAL PROPERTIES OF NIO FOR POSSIBLE DIELECTRIC APPLICATIONS. Venter, André; Botha, Johannes R. // South African Journal of Science;Nov/Dec2010, Vol. 106 Issue 11/12, p1 

    Nickel oxide (NiO) is a versatile wide band gap semiconductor material. At present, transparent conducting oxide films find application as transparent electrodes and window coatings for optoelectronic devices but most are n-type. However p-type conducting films, of which NiO is one, are required...

  • Anisotropy of domain growth in epitaxial ferroelectric capacitors. Wu, D.; Vrejoiu, I.; Alexe, M.; Gruverman, A. // Applied Physics Letters;3/15/2010, Vol. 96 Issue 11, p112903 

    Piezoresponse force microscopy (PFM) has been applied to investigate the switching kinetics in microscale epitaxial Pb(Zr,Ti)O3 capacitors. It is shown that transition from low to high field range brings about a qualitative change in domain growth kinetics, namely, laterally isotropic growth in...

  • Monolithically integrated InGaAlAs dielectric reflectors for vertical cavity optoelectronic devices. Kowalsky, W.; Mahnss, J. // Applied Physics Letters;8/26/1991, Vol. 59 Issue 9, p1011 

    Examines the integration of indium gallium aluminum arsenide and indium aluminum arsenide dielectric reflectors in vertical cavity optoelectronic devices. Growth of the materials on indium phosphide surfaces by molecular beam epitaxy; Reflectivity achieved using 5, 10 and 20 periods of quarter...

  • Multimode laser emission from laterally confined organic microcavities. Sudzius, M.; Langner, M.; Hintschich, S. I.; Lyssenko, V. G.; Fröb, H.; Leo, K. // Applied Physics Letters;2/9/2009, Vol. 94 Issue 6, pN.PAG 

    Room-temperature multimode laser emission is observed in a microcavity consisting of dielectric mirrors and small-molecular-weight organic photonic dots as a cavity layer. The structure shows simultaneous lasing of a wide variety of transverse modes. A comparison of the laser operating...

  • High-power resonantly diode-pumped CW Er3+:YAG laser. Eichhorn, M. // Applied Physics B: Lasers & Optics;Dec2008, Vol. 93 Issue 4, p773 

    Using high-spatial and -spectral brightness laser diodes, a resonantly pumped high-power continuous-wave (CW) Er3+:YAG laser with up to 9 W of output power could be realized. Due to the lower upconversion loss in the 0.5% Er3+-doped crystal, intrinsic efficiencies of up to 64.3% and an optimum...

  • Development of photodetectors for image converters: Doping of silicon with selenium from the gas phase. Astrov, Yu.; Shuman, V.; Lodygin, A.; Portsel, L.; Makhova, A. // Semiconductors;Apr2008, Vol. 42 Issue 4, p448 

    High-speed recording of processes in the IR spectral range can be carried out using image converters of the “semiconductor photodetector + gas discharge gap” type. To develop photodetectors with the properties required for this purpose, the effect of the selenium vapor pressure P Se...

Share

Read the Article

Courtesy of THE LIBRARY OF VIRGINIA

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics