Fermi-level pinning at the interface between metals and nitrogen-doped Ge2Sb2Te5 examined by x-ray photoelectron spectroscopy

Lina Wei-Wei Fang; Rong Zhao; Jisheng Pan; Zheng Zhang; Luping Shi; Tow-Chong Chong; Yee-Chia Yeo
November 2009
Applied Physics Letters;11/9/2009, Vol. 95 Issue 19, p192109
Academic Journal
The metal/α-Ge2Sb2Te5 interface was examined using x-ray photoelectron spectroscopy. Doping Ge2Sb2Te5 with nitrogen leads to an increase in hole barrier height at the interface between metals and nitrogen-doped Ge2Sb2Te5. Hole barrier height at metal/α-Ge2Sb2Te5 interface is reduced slightly by increasing the work function of the metal. We observed significant pinning of metal Fermi level toward the valence band energy of undoped or nitrogen-doped Ge2Sb2Te5. This leads to low hole barrier height and good Ohmic contact formed between metals and α-Ge2Sb2Te5.


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