TITLE

Memory effect of Mn5Ge3 nanomagnets embedded inside a Mn-diluted Ge matrix

AUTHOR(S)
Shengqiang Zhou; Shalimov, Artem; Potzger, Kay; Jeutter, Nicole M.; Baehtz, Carsten; Helm, Manfred; Fassbender, Jürgen; Schmidt, Heidemarie
PUB. DATE
November 2009
SOURCE
Applied Physics Letters;11/9/2009, Vol. 95 Issue 19, p192505
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Crystalline Mn5Ge3 nanomagnets are formed inside a Mn-diluted Ge matrix using Mn ion implantation. A temperature-dependent memory effect and slow magnetic relaxation are observed below the superparamagnetic blocking temperature of Mn5Ge3. Our findings corroborate that the observed spin-glass-like features are caused by the size distribution of Mn5Ge3 nanomagnets, rather than by the interparticle interaction through the Mn-diluted Ge matrix.
ACCESSION #
45249182

 

Related Articles

  • Towards an electro-magnetic field separation of deposited material implemented in an ion beam sputter process. Malobabic, Sina; Jupé, Marco; Ristau, Detlev // Applied Physics Letters;6/3/2013, Vol. 102 Issue 22, p221604 

    Nowadays, Ion Beam Sputter (IBS) processes are very well optimized on an empirical basis. To achieve further progresses, a modification of the IBS process by guiding the coating material using an axial magnetic field and an additional electrical field has been studied. The electro-magnetic (EM)...

  • ClusterBoronâ„¢ Implants on a High Current Implanter. Tieger, Daniel R.; DiVergilio, William; Eisner, Edward C.; Harris, Mark; Hsieh, T. J.; Miranda, John; Reynolds, William P.; Horsky, Tom // AIP Conference Proceedings;2006, Vol. 866 Issue 1, p206 

    Advanced p-junction process tool throughput continues to be one of the principal drivers of the industry. First results from an octadecaborane (B18H22) ClusterIon® source integrated on an existing high current implant tool are presented. Beam current, throughput and process results are...

  • Concentration profiles during films deposition from a low-energy ion beam. Kiprich, V.; Kornich, G.; Bazhin, A. // Russian Physics Journal;Mar2007, Vol. 50 Issue 3, p228 

    An ion beam is described in the diffusion approximation, and a mathematical model of thin-film deposition process is developed. The volume profiles of concentration of components during nickel film deposition on a copper substrate are calculated for ion energies of 100, 200, and 400 eV and ion...

  • Using Multiple Implant Regions To Reduce Development Wafer Usage. Walther, S. R.; Falk, S.; Mehta, S.; Erokhin, Y.; Nunan, P. // AIP Conference Proceedings;2006, Vol. 866 Issue 1, p409 

    The cost of new process development has risen significantly with larger wafer sizes and the increased number of fabrication steps needed to create advanced devices. The high value of each 300 mm development wafer has spurred efforts to find a way to explore more than a single process setting...

  • Direct-Write Ion Beam Lithography. Joshi-Imre, Alexandra; Bauerdick, Sven // Journal of Nanotechnology;2014, p1 

    Patterning with a focused ion beam (FIB) is an extremely versatile fabrication process that can be used to create microscale and nanoscale designs on the surface of practically any solid samplematerial. Based on the type of ion-sample interaction utilized, FIBbasedmanufacturing can be both...

  • Ion-Induced Nanoscale Ripple Patterns on Si Surfaces: Theory and Experiment. Keller, Adrian; Facsko, Stefan // Materials (1996-1944);Oct2010, Vol. 3 Issue 10, p4811 

    Nanopatterning of solid surfaces by low-energy ion bombardment has received considerable interest in recent years. This interest was partially motivated by promising applications of nanopatterned substrates in the production of functional surfaces. Especially nanoscale ripple patterns on Si...

  • Reduction of the Wafer Pattern Damage on the Batch-type High Current Ion Implanters. Oga, Emi; Izutani, Hisaki; Fuse, Genshu; Sugitani, Michiro // AIP Conference Proceedings;2006, Vol. 866 Issue 1, p457 

    The more shrinkage of device patterns becomes, the more device patterns, themselves, can be damaged by collisions between particles and wafers which moves very fast on batch-type implanters. The measures against this problem are to decrease the particles source, not to reach at the wafers, and...

  • Magnetoresistive nanojunctions fabricated via focused ion beam implantation. Stefanescu, E.; Hong, J.; Guduru, R.; Lavrenov, A.; Litvinov, D.; Khizroev, S. // Journal of Nanoparticle Research;Jan2013, Vol. 15 Issue 1, p1 

    Focused ion beam (FIB) is used to implant Ga ions into a 30-nm thick magnetoresistive element to effectively reduce the track width of the sensor from 1 µm to ~80 nm. Through magnetic recording industry-standard spinstand measurements, it is confirmed that a dose of ~10 ions/cm at a 1-pA FIB...

  • High source potential upstream of a current-free electric double layer. Charles, C. // Physics of Plasmas;Apr2005, Vol. 12 Issue 4, p044508 

    Large plasma potentials (up to ∼80 V) are measured upstream of a current-free electric double layer generated in a helicon rf argon discharge for a constant rf power of 250 W (at 13.56 MHz) and for low operating pressures (<2 mTorr) using an electrostatic ion energy analyzer. The energy of...

Share

Read the Article

Courtesy of THE LIBRARY OF VIRGINIA

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics