Memory effect of Mn5Ge3 nanomagnets embedded inside a Mn-diluted Ge matrix

Shengqiang Zhou; Shalimov, Artem; Potzger, Kay; Jeutter, Nicole M.; Baehtz, Carsten; Helm, Manfred; Fassbender, Jürgen; Schmidt, Heidemarie
November 2009
Applied Physics Letters;11/9/2009, Vol. 95 Issue 19, p192505
Academic Journal
Crystalline Mn5Ge3 nanomagnets are formed inside a Mn-diluted Ge matrix using Mn ion implantation. A temperature-dependent memory effect and slow magnetic relaxation are observed below the superparamagnetic blocking temperature of Mn5Ge3. Our findings corroborate that the observed spin-glass-like features are caused by the size distribution of Mn5Ge3 nanomagnets, rather than by the interparticle interaction through the Mn-diluted Ge matrix.


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