TITLE

g-factor and exchange energy in a few-electron lateral InGaAs quantum dot

AUTHOR(S)
Larsson, M.; Nilsson, H. A.; Hardtdegen, H.; Xu, H. Q.
PUB. DATE
November 2009
SOURCE
Applied Physics Letters;11/9/2009, Vol. 95 Issue 19, p192112
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
We report on the measurements of the g-factor and the exchange interaction of electrons in a few-electron lateral quantum dot formed in an InGaAs/InP semiconductor heterostructure. The spin filling sequence of the electron states in the dot is determined by magnetotransport measurements and parallel spin filling configurations are identified. The measured g-factor (for a magnetic field applied parallel to the InGaAs quantum-well layer) has a value in the range of |g*|≈2 to |g*|≈4 and is strongly level-dependent. By analysis of the energies of the states which favor a parallel spin filling, the lower bound of the exchange energy of electrons in the dot in the order of ∼210 μeV is extracted.
ACCESSION #
45249164

 

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