g-factor and exchange energy in a few-electron lateral InGaAs quantum dot

Larsson, M.; Nilsson, H. A.; Hardtdegen, H.; Xu, H. Q.
November 2009
Applied Physics Letters;11/9/2009, Vol. 95 Issue 19, p192112
Academic Journal
We report on the measurements of the g-factor and the exchange interaction of electrons in a few-electron lateral quantum dot formed in an InGaAs/InP semiconductor heterostructure. The spin filling sequence of the electron states in the dot is determined by magnetotransport measurements and parallel spin filling configurations are identified. The measured g-factor (for a magnetic field applied parallel to the InGaAs quantum-well layer) has a value in the range of |g*|≈2 to |g*|≈4 and is strongly level-dependent. By analysis of the energies of the states which favor a parallel spin filling, the lower bound of the exchange energy of electrons in the dot in the order of ∼210 μeV is extracted.


Related Articles

  • An alternative method for spectrum of a two-electron-quantum dot. Hamzavi, M.; Hassanabadi, H.; Rajabi, A. // Few-Body Systems;Sep2009, Vol. 46 Issue 3, p183 

    The subject of quantum dot has received great theoretical attention because of many attractive features they exhibit in a large class of combinations and different methods have been used. In the present work, we consider a two-electron-quantum dot, obtain the quasi-exact analytical solution of...

  • Suppression of nonradiative recombination process in directly Si-doped InAs/GaAs quantum dots. Kita, Takashi; Hasagawa, Ryuichi; Inoue, Tomoya // Journal of Applied Physics;Nov2011, Vol. 110 Issue 10, p103511 

    We carried out direct impurity doping in InAs/GaAs quantum dots (QDs) by selecting the self-assembled growth steps. The photoluminescence (PL) intensity of the Si-doped QDs is enhanced, and thermal quenching of the PL intensity is found to be considerably suppressed, whereas such improvement was...

  • Spectroscopy and recombination dynamics of InAs/AlAs quantum dots. Dawson, P.; Göbel, E. O.; Pierz, K. // Journal of Applied Physics;7/1/2005, Vol. 98 Issue 1, p013541 

    We present a detailed study of the low-temperature spectroscopy and recombination dynamics of an InAs/AlAs quantum dot sample. In particular, our studies reveal the existence of sharp lines in the photoluminescence spectra whose photon energy and decay time depend in a well-defined manner on the...

  • Induced spin-accumulation and spin-polarization in a quantum-dot ring by using magnetic quantum dots and Rashba spin-orbit effect. Eslami, L.; Faizabadi, E. // Journal of Applied Physics;2014, Vol. 115 Issue 20, p204305-1 

    The effect of magnetic contacts on spin-dependent electron transport and spin-accumulation in a quantum ring, which is threaded by a magnetic flux, is studied. The quantum ring is made up of four quantum dots, where two of them possess magnetic structure and other ones are subjected to the...

  • Temperature dependence of exciton transfer in hybrid quantum well/nanocrystal heterostructures. Rohrmoser, Stefan; Baldauf, Julia; Harley, Richard T.; Lagoudakis, Pavlos G.; Sapra, Sameer; Eychmüller, Alexander; Watson, Ian M. // Applied Physics Letters;8/27/2007, Vol. 91 Issue 9, p092126 

    The authors investigate the temperature dependence of exciton transfer from a single InGaN quantum well (QW) donor to colloidal CdS nanocrystal quantum dot acceptors and obtain an optimum transfer efficiency of 65% at 60 K. Time and spectrally resolved measurements reveal that the transfer...

  • Electroluminescence And Spin-Polarized Hole Injection In InAs/GaAs Quantum Dot Heterostructures. Baidus, N. V.; Vasilevskiy, M. I.; Zvonkov, B. N.; Dorokhin, M. V.; Demina, P. B.; van der Meulen, H.; Calleja, J. M.; Vina, L. // AIP Conference Proceedings;1/4/2010, Vol. 1199 Issue 1, p337 

    We demonstrate the feasibility to obtain electroluminescence (EL), up to room temperature, from self-assembled quantum dots included in a Schottky diode. Moreover, using a ferromagnet as the contact layer, sizable circular polarization of the emission in the presence of an external magnetic...

  • Interaction of a 2-level system with 2D phonons. Naber, W. J. M.; Fujisawa, T.; Liu, H. W.; van der Wiel, W. G. // AIP Conference Proceedings;2007, Vol. 893 Issue 1, p755 

    We report on the non-adiabatic interaction between 2D acoustic phonons and an artificial 2-level system in a GaAs/AlGaAs heterostructure. The 2-level system is formed by two discrete energy levels inside a double quantum dot, and monochromatic surface acoustic waves (∼2 GHz) are generated...

  • On modeling the mechanical behavior of heterostructures with quantum dots. Goldshtein, R. V.; Gorodtsov, V. A.; Shushpannikov, P. S. // Russian Physics Journal;Nov2009, Vol. 52 Issue 11, p1177 

    The problems on simulation of a stressed-strained state in epitaxial quantum-dot heterostructures with and without coating are considered. Within the framework of the continuum approach, a mechanical-mathematical model of a quantum dot is developed. The stressed-strained state in a...

  • Lateral electron transport through single self-assembled InAs quantum dots. Jung, M.; Hirakawa, K.; Kawaguchi, Y.; Komiyama, S.; Ishida, S.; Arakawa, Y. // Applied Physics Letters;1/17/2005, Vol. 86 Issue 3, p033106 

    The electron transport through single self-assembled InAs quantum dots (QDs) grown on GaAs surfaces has been investigated by using metallic leads with narrow gaps. Clear Coulomb staircases and Coulomb gaps have been observed at 4.2 K. Coulomb blockade oscillation which reflects single electron...


Read the Article


Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics