Spin-polarized tunneling in fully epitaxial magnetic tunnel diodes with a narrow-gap In1-xMnxAs electrode

Saito, H.; Yuasa, S.; Ando, K.
November 2009
Applied Physics Letters;11/9/2009, Vol. 95 Issue 19, p192508
Academic Journal
We investigated spin-dependent tunneling properties in fully epitaxial Fe/ZnSe/In1-xMnxAs with a metal/insulator/semiconductor structure. A tunneling magnetoresistance (TMR) ratio up to 14% was observed, which is the first TMR reported in tunnel junctions with a narrow-gap magnetic semiconductor electrode. This magnetic tunnel diode should be a major breakthrough in developing a Kisaki-type spin bipolar transistor.


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