TITLE

Mapping out the distribution of electronic states in the mobility gap of amorphous zinc tin oxide

AUTHOR(S)
Erslev, Peter T.; Sundholm, Eric S.; Presley, Rick E.; Hong, David; Wager, John F.; Cohen, J. David
PUB. DATE
November 2009
SOURCE
Applied Physics Letters;11/9/2009, Vol. 95 Issue 19, p192115
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Amorphous zinc tin oxide (ZTO) is a wide-band-gap (transparent) semiconductor which exhibits high electron mobilities irrespective of its disordered nature. Transient photocapacitance (TPC), drive level capacitance profiling (DLCP), and modulated photocurrent spectroscopy (MPC) were used to determine the electronic state distribution within the mobility gap of ZTO. Conduction band-tail and valence band-tail Urbach energies near 10 and 110 meV were obtained by MPC and TPC, respectively. DLCP indicated free carrier densities in the mid-1015 cm-3 range plus a 0.2eV wide band of defects 0.4eV from the conduction band. The MPC spectra for ZTO also disclosed a defect band near the conduction band-tail.
ACCESSION #
45249156

 

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