Kinetics of a transient silicide during the reaction of Ni thin film with (100)Si

Mangelinck, Dominique; Hoummada, Khalid; Blum, Ivan
November 2009
Applied Physics Letters;11/2/2009, Vol. 95 Issue 18, p181902
Academic Journal
In situ measurements of the kinetics of the transient θ-Ni2Si phase formation have been obtained by x-ray diffraction and differential scanning calorimetry. A possible mechanism for the transient phase is proposed. It allows to simulate the growth and the consumption of the θ-Ni2Si during the growth of the δ-Ni2Si silicide.


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