TITLE

Measurement of effective electron mass in biaxial tensile strained silicon on insulator

AUTHOR(S)
Feste, S. F.; Schäpers, Th.; Buca, D.; Zhao, Q. T.; Knoch, J.; Bouhassoune, M.; Schindlmayr, Arno; Mantl, S.
PUB. DATE
November 2009
SOURCE
Applied Physics Letters;11/2/2009, Vol. 95 Issue 18, p182101
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
We present measurements of the effective electron mass in biaxial tensile strained silicon on insulator (SSOI) material with 1.2 GPa stress and in unstrained SOI. Hall-bar metal oxide semiconductor field effect transistors on 60 nm SSOI and SOI were fabricated and Shubnikov–de Haas oscillations in the temperature range of T=0.4–4 K for magnetic fields of B=0–10 T were measured. The effective electron mass in SSOI and SOI samples was determined as mt=(0.20±0.01)m0. This result is in excellent agreement with first-principles calculations of the effective electron mass in the presence of strain.
ACCESSION #
45036578

 

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