TITLE

Trigonal paramagnetic interface defect in epitaxial Ge3N4/(111)Ge

AUTHOR(S)
Nguyen, A. P. D.; Stesmans, A.; Afanas’ev, V. V.; Lieten, R. R.; Borgs, G.
PUB. DATE
November 2009
SOURCE
Applied Physics Letters;11/2/2009, Vol. 95 Issue 18, p183501
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
We report on the observation by electron spin resonance (ESR) of an anisotropic paramagnetic defect at the interface of epitaxially grown Ge3N4/(111)Ge entities with nanometer thin Ge3N4 layers. The defect exhibits trigonal C3v symmetry characterized by g∥≈2.0023 and g⊥≈2.0032, and is observed most prominently after 10 eV optical excitation, with maximum areal density ≈2×1011 cm-2. The defect is suggested to concern the Ge K-type center, its occurrence appearing inherent to the specific heteroepitaxial interface matching.
ACCESSION #
45036574

 

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