TITLE

Minority electron unipolar photodetectors based on type II InAs/GaSb/AlSb superlattices for very long wavelength infrared detection

AUTHOR(S)
Nguyen, B.-M.; Bogdanov, S.; Pour, S. Abdollahi; Razeghi, M.
PUB. DATE
November 2009
SOURCE
Applied Physics Letters;11/2/2009, Vol. 95 Issue 18, p183502
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
We present a hybrid photodetector design that inherits the advantages of traditional photoconductive and photovoltaic devices. The structure consists of a barrier layer blocking the transport of majority holes in a p-type semiconductor, resulting in an electrical transport due to minority carriers with low current density. By using the M-structure superlattice as a barrier region, the band alignments can be experimentally controlled, allowing for the efficient extraction of the photosignal with less than 50 mV bias. At 77 K, a 14 μm cutoff detector exhibits a dark current 3.3 mA/cm2, a photoresponsivity of 1.4 A/W, and the associated shot noise detectivity of 4×1010 Jones.
ACCESSION #
45036562

 

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