Engineering single photon emitters by ion implantation in diamond

Naydenov, B.; Kolesov, R.; Batalov, A.; Meijer, J.; Pezzagna, S.; Rogalla, D.; Jelezko, F.; Wrachtrup, J.
November 2009
Applied Physics Letters;11/2/2009, Vol. 95 Issue 18, p181109
Academic Journal
Diamond provides unique technological platform for quantum technologies including quantum computing and communication. Controlled fabrication of optically active defects is a key element for such quantum toolkit. Here we report the production of single color centers emitting in the blue spectral region by high energy implantation of carbon ions. We demonstrate that single implanted defects show sub-poissonian statistics of the emitted photons and can be explored as single photon source in quantum cryptography. Strong zero phonon line at 470.5 nm allows unambiguous identification of this defect as interstitial-related TR12 color center.


Related Articles

  • One- and two-dimensional photonic crystal microcavities in single crystal diamond. Riedrich-Möller, Janine; Kipfstuhl, Laura; Hepp, Christian; Neu, Elke; Pauly, Christoph; Mücklich, Frank; Baur, Armin; Wandt, Michael; Wolff, Sandra; Fischer, Martin; Gsell, Stefan; Schreck, Matthias; Becher, Christoph // Nature Nanotechnology;Jan2012, Vol. 7 Issue 1, p69 

    Diamond is an attractive material for photonic quantum technologies because its colour centres have a number of outstanding properties, including bright single photon emission and long spin coherence times. To take advantage of these properties it is favourable to directly fabricate optical...

  • Ion-implanted buried layer in diamond as a source of ballistic phonons at liquid-helium temperatures. Galkina, T. I.; Sharkov, A. I.; Klokov, A. Yu.; Bonch-Osmolovskii, M. M.; Khmel’nitskii, R. A.; Dravin, V. A.; Gippius, A. A. // JETP Letters;8/25/96, Vol. 64 Issue 4, p298 

    It is shown that an approximately 150 nm thick ion-implanted buried layer in diamond and excited by a pulsed laser at wavelength λ=337 nm is a source of nonequilibrium acoustic phonons propagating ballistically through the diamond sample at temperatures ∼2 K. © 1996 American Institute...

  • Single photon emitters based on Ni/Si related defects in single crystalline diamond. Steinmetz, D.; Neu, E.; Meijer, J.; Bolse, W.; Becher, C. // Applied Physics B: Lasers & Optics;Mar2011, Vol. 102 Issue 3, p451 

    We present investigations on single Ni/Si related color centers produced via ion implantation into single crystalline type IIa CVD diamond. By testing different ion dose combinations we show that there is an upper limit for both the Ni and the Si dose (10 cm and 10 cm resp.) due to the creation...

  • Doping of diamond by coimplantation of carbon and boron. Sandhu, G. S.; Swanson, M. L.; Chu, W. K. // Applied Physics Letters;10/2/1989, Vol. 55 Issue 14, p1397 

    We have implanted boron ions into insulating natural diamonds which were predamaged by carbon ion implantation in order to enhance the doping efficiency. All implantations were performed at liquid-nitrogen temperature. Subsequent rapid thermal annealing at 1100 °C produced strong new optical...

  • Spatial resolution of selectively deposited diamond stripes on ion implanted Si(100). Huang, J.T.; Lin, S.J.; Hwang, J.; Lin, T.S. // Applied Physics Letters;1/3/1994, Vol. 64 Issue 1, p73 

    Examines the growth of diamond stripes on ion implanted silicon(100) substrate. Use of surface treatments in diamond deposition; Enhancement of the nucleation density of diamond on silicon; Width of each diamond stripe; Dependence of diamond stripe spatial resolution on silicon dioxide thickness.

  • Improvement of selectivity during diamond growth utilizing a new process. Chen, Chia-Fu; Chen, Sheng-Hsiung; Hong, Tsao-Ming; Tsai, Ming-Hsing // Journal of Applied Physics;1/15/1995, Vol. 77 Issue 2, p940 

    Presents a study that investigated the improvement of selectivity during diamond growth. Information on how to achieve diamond patterning; Shortages experienced by using ion implanting method; Description of the procedure for selective diamond growth.

  • Hall mobility and carrier concentration versus temperature for type IIa natural insulating diamond doped with boron by ion implantation. de la Houssaye, Paul R.; Penchina, Claude M.; Hewett, Charles A.; Zeidler, James R.; Wilson, Robert G. // Journal of Applied Physics;4/1/1992, Vol. 71 Issue 7, p3220 

    Presents information on a study that implanted boron ions in a natural IIa diamond at a substrate temperature of 80 Kelvin. Experimental procedure; Results and discussion; Conclusions.

  • Formation of buried p-type conducting layers in diamond. Walker, R.; Prawer, S. // Applied Physics Letters;9/15/1997, Vol. 71 Issue 11, p1492 

    Examines the formation of electrically active born doped layers in natural diamond using high energy ion implantation. Importance of ion implantation for the doping of diamond; Methods in making electrical contacts to the buried layers; Conditions for removing the Raman active defect clusters.

  • Heteroepitaxy of carbon on copper by high-temperature ion implantation. Lee, S.-Tong; Chen, Samuel // Applied Physics Letters;8/12/1991, Vol. 59 Issue 7, p785 

    Examines carbon-ion-implantation-outdiffusion method for growing epitaxial diamond layers on copper. Formation of graphite as carbon films; Importance of transmission electron diffraction in the characterization of diamond films; Uncertainty on the formation of epitaxial diamond layer through...


Read the Article


Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics