TITLE

Quantum confined Stark effect and corresponding lifetime reduction in a single InxGa1-xN quantum disk

AUTHOR(S)
Holmes, Mark J.; Park, Young S.; Warner, Jamie H.; Taylor, Robert A.
PUB. DATE
November 2009
SOURCE
Applied Physics Letters;11/2/2009, Vol. 95 Issue 18, p181910
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Time-integrated and time-resolved microphotoluminescence studies were carried out on InxGa1-xN quantum disks embedded in GaN nanocolumns grown by molecular beam epitaxy. Emission at ∼3.33 eV from confined states was detected and observed to blueshift with excitation power; a result of charge screening and the quantum confined Stark effect. Due to the reduced band bending and resulting increased overlap of the confined electron and hole wave functions, the lifetime of the emission was measured to decrease with increasing excitation power. The saturation of the blueshift and lifetime reduction follows that of the peak intensity, indicating a Stark screening process.
ACCESSION #
45036544

 

Related Articles

  • Synthesis of aligned GaN nanorods on Si?(111) by molecular beam epitaxy. Kim, Y. H.; Lee, J. Y.; Lee, S.-H.; Oh, J.-E.; Lee, H. S. // Applied Physics A: Materials Science & Processing;May2005, Vol. 80 Issue 8, p1635 

    Straight and well-aligned GaN nanorods have been successfully synthesized by molecular beam epitaxy (MBE) method. The GaN nanorods have been characterized by field-emission scanning electron microscopy (FE-SEM) equipped with energy dispersive X-ray spectroscopy (EDS), X-ray diffraction (XRD),...

  • Reactive ion etching of ZnSe by gas mixture of ethane and hydrogen. Ohtsuka, K.; Imaizumi, M. // Applied Physics Letters;6/15/1992, Vol. 60 Issue 24, p3025 

    Focuses on reactive ion etching of zinc selenide (ZnSe) by gas mixture of ethane and hydrogen. Growth of ZnSe epitaxial layers by gas source molecular beam epitaxy; Analysis of the ethane concentration dependence of surface morphologies; Use of scanning electron microscopy.

  • Formation and atomic force spectroscopy of AlGaN/GaN nanoheterostructures. Tsarik, K.; Nevolin, V. // Semiconductors;Dec2010, Vol. 44 Issue 13, p1694 

    procedure of production of Group-III nitride layers with a reduced number of defects is developed. The procedure is based on molecular-beam epitaxy with simultaneous monitoring of the surface by scanning electron microscopy. It is established that the layer structural quality assessed from the...

  • The effect of sub-band gap photon illumination on the properties of GaN layers grown on Si(111) by MBE. Ramizy, Asmiet; Omar, Khalid; Hassan, Z.; Alattas, Omar // Journal of Nanoparticle Research;Dec2011, Vol. 13 Issue 12, p7139 

    Nanostructured GaN layers are fabricated by laser-induced etching processes based on heterostructure of n-type GaN/AlN/Si grown on n-type Si(111) substrate. The effect of varying laser power density on the morphology of GaN nanostructure layer is observed. The formation of pores over the...

  • Monolithic integration of InGaN segments emitting in the blue, green, and red spectral range in single ordered nanocolumns. Albert, S.; Bengoechea-Encabo, A.; Kong, X.; Sanchez-Garcia, M. A.; Calleja, E.; Trampert, A. // Applied Physics Letters;5/6/2013, Vol. 102 Issue 18, p181103 

    This work reports on the selective area growth by plasma-assisted molecular beam epitaxy and characterization of InGaN/GaN nanocolumnar heterostructures. The optimization of the In/Ga and total III/V ratios, as well as the growth temperature, provides control on the emission wavelength, either...

  • Molecular-Beam Epitaxy and Properties of Heterostructures with InAs Nanoclusters in an Si Matrix. Denisov, D. V.; Serenkov, I. T.; Sakharov, V. I.; Tsyrlin, G. É.; Ustinov, V. M. // Physics of the Solid State;Nov2003, Vol. 45 Issue 11, p2194 

    The formation of heteroepitaxial structures with InAs nanoclusters in an Si matrix during molecular-beam epitaxy and variations in the parameters of these structures due to thermal annealing are investigated by reflection high-energy electron diffraction (RHEED), medium-energy ion scattering...

  • Properties of GaAs Nanowhiskers Grown on a GaAs(111)B Surface Using a Combined Technique. Tonkikh, A. A.; Cirlin, G. E.; Samsonenko, Yu. B.; Soshnikov, P.; Ustinov, V. M. // Semiconductors;Oct2004, Vol. 38 Issue 10, p1217 

    Arrays of GaAs whiskers on GaAs(111)B substrates were grown using a technique combining vacuum evaporation and molecular-beam epitaxy. The surface structural properties of the samples obtained were studied by scanning electron microscopy. It was found that the areal density of the whiskers...

  • Optical studies of erbium excited states in Ga[sub 0.55]Al[sub 0.45]As. Benyattou, T.; Seghier, D. // Applied Physics Letters;1/20/1992, Vol. 60 Issue 3, p350 

    Details an optical analysis of erbium (Er) doped gallium aluminum arsenide (GaAlAs) excited states. Growth of GaAlAs:Er sample by molecular beam epitaxy; Analysis on the temperature dependence of emissions from Er-doped GaAs; Detection of erbium excited states in GaAlAs.

  • Different growth rates for catalyst-induced and self-induced GaN nanowires. Chèze, C.; Geelhaar, L.; Jenichen, B.; Riechert, H. // Applied Physics Letters;10/11/2010, Vol. 97 Issue 15, p153105 

    The catalyst- and self-induced pathways of GaN nanowire growth by molecular beam epitaxy are compared. The catalyst-induced nanowires elongate faster than the self-induced ones and their growth rate is fully determined by the impinging N rate. The self-induced nanowire growth rate is identical...

Share

Read the Article

Courtesy of THE LIBRARY OF VIRGINIA

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics