Studies of charge transfer processes across donor-acceptor interface using a field effect transistor geometry

Rao, Manohar; Narayan, K. S.
November 2009
Applied Physics Letters;11/2/2009, Vol. 95 Issue 18, p183306
Academic Journal
The existence of donor-type polymer field effect transistors (FETs), which are FETs exhibiting p-type characteristics and acceptor-type molecular FETs with n-type characteristics, provide an interesting possibility of a combined active bilayer system, especially under photoexcitation. We present a device structure and methodology that is conducive to study donor-acceptor interfacial processes using a FET platform. The changes in FET characteristics initiated by the photogenerated carriers in the donor coated acceptor device are studied using steady state and pulsed photoexcitation.


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