TITLE

Energy band-alignment of a multimetal-layer gated metal-oxide-semiconductor structure

AUTHOR(S)
Li, Zilan; Houssa, Michel; Schram, Tom; De Gendt, Stefan; De Meryer, Kristin
PUB. DATE
November 2009
SOURCE
Applied Physics Letters;11/2/2009, Vol. 95 Issue 18, p183506
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
The energy band-alignment of a multimetal-layer gated metal-oxide-semiconductor structure is investigated. An analytical expression for the Fermi level of the metal stack is derived. It is shown that the thin metal layer contacting the gate dielectric plays a critical role in determining the work function of the whole metal stack, in agreement with experimental results.
ACCESSION #
45036529

 

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