Aging of AlGaN quantum well light emitting diode studied by scanning near-field optical spectroscopy

Pinos, A.; Marcinkevicˇius, S.; Yang, J.; Bilenko, Y.; Shatalov, M.; Gaska, R.; Shur, M. S.
November 2009
Applied Physics Letters;11/2/2009, Vol. 95 Issue 18, p181914
Academic Journal
Emission from a 285 nm AlGaN quantum well light emitting diode has been studied by scanning near-field optical spectroscopy. The scans revealed micrometer-size domainlike areas emitting with a higher intensity and at a longer wavelength; presumably, because of a lower AlN molar fraction in these regions. Experiments performed on different days have shown that with time, intensity from these spots increases and emission wavelength shifts to the red, indicating a further change in the quantum well alloy composition. This has allowed distinguishing an aging mechanism that involves locally increased current, heating, and atom migration.


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