Field dependence of barrier heights and luminescence properties in polar and nonpolar InGaN/GaN single quantum wells

Song, Hooyoung; Kim, Jin Soak; Kim, Eun Kyu; Lee, Sung-Ho; Hwang, Sung-Min
November 2009
Applied Physics Letters;11/2/2009, Vol. 95 Issue 18, p182109
Academic Journal
The external field dependence of barrier heights and the internal field dependence of luminescence properties in InxGa1-xN/GaN single quantum wells (SQWs) with polar (x=0.13) and nonpolar (x=0.15) orientations were investigated. The conduction band offset of a SQW was characterized by using deep level transient spectroscopy. At a reverse bias of -3 V, the barrier height of the nonpolar SQW was estimated to be 0.42 eV, which is smaller than the 0.60 eV seen in the polar SQW due to the absence of internal fields along the nonpolar direction. Both samples showed a redshift of barrier heights with increasing reverse bias. The carrier recombination affected by carrier localization, quantum-confined Stark effect, and Varshni’s shift was analyzed through temperature-dependent photoluminescence. Numerical simulations of the barrier heights and internal fields showed good agreement with experimental results.


Related Articles

  • Comparison of electrical and luminescence data for the A center in CdTe. Castaldini, A.; Cavallini, A.; Fraboni, B.; Fernandez, P.; Piqueras, J. // Applied Physics Letters;12/2/1996, Vol. 69 Issue 23, p3510 

    We have investigated the electrical and optical properties of the deep levels responsible for the 1.4–1.5 eV luminescence band usually observed in II–VI compounds. We compared the energy levels found by cathodoluminescence and junction spectroscopy methods for semi-insulating...

  • Observation of carrier depletion and emission effects on capacitance dispersion in relaxed... Chen, J.F.; Wang, P.Y. // Applied Physics Letters;10/18/1999, Vol. 75 Issue 16, p2461 

    Examines the carrier depletion and emission effects on capacitance dispersion in relaxed quantum wells. Frequency-dependent capacitance measurements; Reason for the difficulty in determining the low-frequency inflection capacitance; Deep-level transient spectroscopy (DLTS).

  • Thermal hole emission from Si/Si1-xGex/Si quantum wells by deep level transient spectroscopy. Chretien, O.; Apetz, R.; Vescan, L.; Souifi, A.; Lüth, H.; Schmalz, K.; Koulmann, J. J. // Journal of Applied Physics;11/1/1995, Vol. 78 Issue 9, p5439 

    Presents information on a study which discussed the determination of the valence band offset between strained Si[sub1-x]Ge[subx] and unstrained silicon (Si) layers by deep level transient spectroscopy (DLTS) on Si/Si[sub1-x]Ge[subx]/Si quantum well structures. Steps of the DLTS measurements;...

  • Observation of deep-level-free band edge luminescence and quantum confinement in strained.... Usami, N.; Fukatsu, S. // Applied Physics Letters;10/5/1992, Vol. 61 Issue 14, p1706 

    Examines the deep-level-free band edge luminescence of strained silicon germanide (SiGe) and silicon single quantum wells. Identification of no-phonon transitions due to symmetry-breaking alloy disordering in SiGe layers; Absence of the defect-related deep level emissions; Presence of a...

  • Deep electron traps in GaAs/n-AlxGa1-xAs single-quantum wells. As, D. J.; Epperlein, P. W.; Mooney, P. M. // Journal of Applied Physics;9/1/1988, Vol. 64 Issue 5, p2408 

    Presents a study which determined the deep electron traps in gallium arsenide/n-AlxGa1-xAs single-quantum wells. Determination of double-correlated deep-level-transient spectroscopy (DLTS); DLTS measurements; Capture process.

  • Effects of leakage current on deep level transient spectroscopy. Chen, M. C.; Lang, D. V.; Dautremont-Smith, W. C.; Sergent, A. M.; Harbison, J. P. // Applied Physics Letters;1984, Vol. 44 Issue 8, p790 

    A tunnel metal-insulator-semiconductor capacitor has been studied by deep level transient spectroscopy (DLTS) technique to demonstrate, along with computer simulation, that the presence of leakage current can drastically affect the DLTS spectra of a broad distribution of states. This leakage...

  • Assignment of deep levels causing yellow luminescence in GaN. Soh, C. B.; Chua, S. J.; Lim, H. F.; Chi, D. Z.; Tripathy, S.; Liu, W. // Journal of Applied Physics;8/1/2004, Vol. 96 Issue 3, p1341 

    The deep levels in GaN associated with yellow luminescence transitions have been investigated using photoluminescence, Hall measurements, and deep level transient spectroscopy (DLTS). Hall measurements on Si-doped GaN show the presence of donor levels at ∼18, ∼35, and ∼70 meV,...

  • Influence of free carrier screening on the luminescence energy shift and carrier lifetime of InGaN quantum wells. Kuroda, Takamasa; Tackeuchi, Atsushi // Journal of Applied Physics;9/15/2002, Vol. 92 Issue 6, p3071 

    We studied the influence of free carrier screening on the luminescence energy shift and carrier lifetime of InGaN multiple quantum wells (MQWs) mainly in relation to a quantum-confined Stark effect. We performed a systematic time-resolved photoluminescence measurement of MQWs for various carrier...

  • Determination of the sub-band energy in the V-shaped potential well of delta-doped GaAs by deep.... Zhu, Q.S.; Zhong, Z.T. // Applied Physics Letters;11/7/1994, Vol. 65 Issue 19, p2425 

    Determines the conduction-subband energy levels in V-shaped potential well induced by silicon delta-doping in gallium arsenide using deep level transient spectroscopy (DLTS). Production of four subbands in the well before the Fermi level; Observation of two DLTS peak; Merger of two subbands...


Read the Article


Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics