TITLE

Field dependence of barrier heights and luminescence properties in polar and nonpolar InGaN/GaN single quantum wells

AUTHOR(S)
Song, Hooyoung; Kim, Jin Soak; Kim, Eun Kyu; Lee, Sung-Ho; Hwang, Sung-Min
PUB. DATE
November 2009
SOURCE
Applied Physics Letters;11/2/2009, Vol. 95 Issue 18, p182109
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
The external field dependence of barrier heights and the internal field dependence of luminescence properties in InxGa1-xN/GaN single quantum wells (SQWs) with polar (x=0.13) and nonpolar (x=0.15) orientations were investigated. The conduction band offset of a SQW was characterized by using deep level transient spectroscopy. At a reverse bias of -3 V, the barrier height of the nonpolar SQW was estimated to be 0.42 eV, which is smaller than the 0.60 eV seen in the polar SQW due to the absence of internal fields along the nonpolar direction. Both samples showed a redshift of barrier heights with increasing reverse bias. The carrier recombination affected by carrier localization, quantum-confined Stark effect, and Varshni’s shift was analyzed through temperature-dependent photoluminescence. Numerical simulations of the barrier heights and internal fields showed good agreement with experimental results.
ACCESSION #
45036517

 

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