Relationship between band alignment and chemical states upon annealing in HfSiON/SiON stacked films on Si substrates

Tanimura, T.; Toyoda, S.; Kamada, H.; Kumigashira, H.; Oshima, M.; Liu, G. L.; Liu, Z.; Ikeda, K.
November 2009
Applied Physics Letters;11/2/2009, Vol. 95 Issue 18, p183113
Academic Journal
We have investigated the relationship between band alignment and chemical states in HfSiON/SiON stacked films on Si substrates by photoemission spectroscopy and x-ray absorption spectroscopy. Valence-band maxima mainly derived from N 2p states in HfSiON films are closely related to N–Hf bonding configurations. The valence-band offset for a thick HfSiON film is smaller than that for a thin HfSiON film, due to the amount of N–Hf bonding states. Since N–Hf bonding states decrease upon annealing, thickness dependence of valence-band offset can be eliminated. On the other hand, the conduction-band offset does not depend on either the thickness or annealing.


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