TITLE

The variation of microstruture in Czochralski silicon induced by low-high two step anneal

AUTHOR(S)
Kung, C.Y.; Liu, C.M.; Hsu, W.; Horng, R. H.
PUB. DATE
January 1998
SOURCE
Journal of Applied Physics;1/1/1998, Vol. 83 Issue 1, p56
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Studies the variation of microstructure in Czochralski silicon wafers induced by a low-high two step anneal. Description of the defect microstructures observed after low-high two-step and the low-high three-step anneal tests by using 650 degrees Celsius as the low (nucleation) temperature; Formation on annihilation of cluster precipitates; Affect of the low-temperature anneal time.
ACCESSION #
44920

 

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