Magnetization-controlled conductance in (Ga,Mn)As-based resonant tunneling devices

Tran, M.; Peiro, J.; Jaffrès, H.; George, J.-M.; Mauguin, O.; Largeau, L.; Lemaı⁁tre, A.
October 2009
Applied Physics Letters;10/26/2009, Vol. 95 Issue 17, p172101
Academic Journal
We report on experimental evidence of a magnetization-controlled conductance in AlAs/GaAs/AlAs resonant tunneling diodes contacted by a (Ga,Mn)As ferromagnetic electrode. Large shifts of the resonance voltages occur as the magnetization is rotated from in-plane to out-of-plane directions resulting in a singular tunneling anisotropic magnetoresistance signal. This opens the way to control the tunneling current upon the magnetization orientation of the magnetic layer, playing the role of a magnetic gate.


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