Thermal annealing induced bicontinuous networks in bulk heterojunction solar cells and bipolar field-effect transistors

Kong, Hoyoul; Moon, Ji Sun; Cho, Nam Sung; Jung, In Hwan; Park, Moo-Jin; Park, Jong-Hwa; Cho, Shinuk; Shim, Hong-Ku
October 2009
Applied Physics Letters;10/26/2009, Vol. 95 Issue 17, p173301
Academic Journal
Polymer bulk heterojunction solar cells fabricated from poly(2,5-bis(3′-dodecyl-2,2′-bithiophen-5-yl)-3,6-dimethylthieno [3,2-b] thiophene):[6,6]-phenyl-C61-butric acid methyl ester (1:1, w/w) blend showed significantly improved power conversion efficiency (PCE), from 0.96% to 2.32%, with post-thermal annealing at 140 °C. Charge transport properties obtained from bipolar field-effect transistors indicated that post-thermal annealing induced the assembly of significantly improved bicontinuous networks and excellently balanced hole (7.2×10-3 cm2 V-1 s-1) and electron (5.8×10-3 cm2 V-1 s-1) mobilities (due, particularly, to improved electron mobility), thereby improving PCE.


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