Three-dimensional structure of the buffer/absorber interface in CdS/CuGaSe2 based thin film solar cells

Rusu, M.; Bär, M.; Lehmann, S.; Sadewasser, S.; Weinhardt, L.; Kaufmann, C. A.; Strub, E.; Röhrich, J.; Bohne, W.; Lauermann, I.; Jung, Ch.; Heske, C.; Lux-Steiner, M. Ch.
October 2009
Applied Physics Letters;10/26/2009, Vol. 95 Issue 17, p173502
Academic Journal
The chemical structure of the CdS/CuGaSe2 chalcopyrite solar cell buffer/absorber interface is investigated by combining element depth profiling using elastic recoil detection analysis and surface-near bulk sensitive x-ray emission spectroscopy. Significant Cd and S concentrations (≥0.1 at. %) are found deep in the absorber bulk. The determined high Cd and S diffusion coefficient values at 333 K of 3.6 and 3.4×10-12 cm2/s, respectively, are attributed to diffusion along CuGaSe2 grain boundaries. As a result, a three-dimensional buffer/absorber interface geometry is proposed.


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