TITLE

Anomalous Hall resistance in Ge:Mn systems with low Mn concentrations

AUTHOR(S)
Zhou, Shengqiang; Bürger, Danilo; Helm, Manfred; Schmidt, Heidemarie
PUB. DATE
October 2009
SOURCE
Applied Physics Letters;10/26/2009, Vol. 95 Issue 17, p172103
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Taking Mn doped Germanium as an example, we evoke the consideration of a two-band-like conduction in diluted ferromagnetic semiconductor (FMS). The main argument for claiming Ge:Mn as a FMS is the occurrence of the anomalous Hall effect (AHE). Usually, the reported AHE (1) is observable at temperatures above 10 K, (2) exhibits no hysteresis, and (3) changes the sign of slope. We observed a similar Hall resistance in Mn implanted Ge with the Mn concentration as low as 0.004%. We show that the puzzling AHE features can be explained by considering a two-band-like conduction in Ge:Mn.
ACCESSION #
44909857

 

Related Articles

  • Study of classical Hall effect in an amorphous As2S3 semiconducting glass. Singh, K.; Asiamah, Stephen // Journal of Applied Physics;8/15/1994, Vol. 76 Issue 4, p2227 

    Discusses a study which examined the Hall effect in an amorphous As[sub2]S[sub3] semiconducting glass. Characteristics of amorphous materials; Classification of a noncrystalline system in describing the electrical properties of materials; Status of the Hall effect for amorphous semiconductors...

  • Hysteresis of Magnetoresistance in Neutron-Transmutation-Doped Ge in the Region of Hopping Transport over the Coulomb-Gap States. Andreev, A. G.; Egorov, S. V.; Zabrodskii, A. G.; Parfen�ev, R. V.; Chernyaev, A. V. // Semiconductors;Jul2000, Vol. 34 Issue 7, p768 

    The phenomenon of hysteresis of magnetoresistance in neutron-transmutation-doped Ge:Ga in the region of hopping transport over the Coulomb-gap states was observed and studied experimentally. The hysteresis is accompanied by an abrupt decrease in the resistivity in a magnetic field of about 800...

  • Electrical properties of p-Zn1 − xCd xGeAs 2〈Mn〉. Mollaev, A. Yu.; Saipulaeva, L. A.; Marenkin, S. F.; Alibekov, A. G.; Abdullaev, A. A.; Fedorchenko, I. V. // Inorganic Materials;May2010, Vol. 46 Issue 5, p449 

    The electrical resistivity and Hall coefficient of the high-temperature ferromagnetic semiconductor p-Zn1 − xCd xGeAs2〈Mn〉 have been measured as a function of pressure near room temperature. The features in the curves obtained attest to a structural phase transition at...

  • Ferromagnetic Ge:Mn prepared by ion implantation and pulsed laser annealing. Zhou, Shengqiang; Bürger, D.; Li, Lin; Skorupa, W.; Helm, M.; Oesterlin, P.; Schmidt, H. // AIP Conference Proceedings;12/22/2011, Vol. 1399 Issue 1, p699 

    We report the fabrication of Ge:Mn ferromagnetic semiconductors by Mn-ion implantation into Ge followed by pulsed laser annealing. The implanted Ge layer was recrystallized during annealing. We observed that the longitudinal and Hall resistances exhibit the same hysteresis as the magnetization,...

  • The electromagnetic properties of dilute magnetic GeSi:Mn quantum rings. Ma, Xiying // Journal of Materials Science;Mar2013, Vol. 48 Issue 5, p2111 

    We present a synthesis of GeSi:Mn dilute magnetic semiconductor (DMS) quantum rings and their electromagnetic properties. The GeSi:Mn rings were grown by means of a chemical vapor deposition process, and then doped with Mn using a magnetic sputtering technique. The as-grown and annealed DMS ring...

  • Temperature-dependent Hall scattering factor and drift mobility in remotely doped Si:B/SiGe/Si... McGregor, B.M.M.; Lander, R.J.P.; Lander, P.J.; Phillips, P.J.; Parker, E.H.C.; Whall, T.E. // Applied Physics Letters;3/1/1999, Vol. 74 Issue 9, p1245 

    Determines Hall and capacitance-voltage measurements in remotely doped Si:B/SiGe/Si heterostructures. Drift mobility calculations in the doped structures; Modification of Hall mobility by the addition of germanium; Consistency of the decline in the Hall scattering factor with rising temperature...

  • Hysteretic magnetoresistance and thermal bistability in a magnetic two-dimensional hole system. Wurstbauer, Ursula; Śliwa, Cezary; Weiss, Dieter; Dietl, Tomasz; Wegscheider, Werner // Nature Physics;Dec2010, Vol. 6 Issue 12, p955 

    Colossal negative magnetoresistance and the associated field-inducedinsulator-to-metal transition-the most characteristic features of magnetic semiconductors-are observed in n-type rare-earth oxides and chalcogenides, p-type manganites and n-type and p-type diluted magnetic semiconductors, as...

  • Dc-transport properties of ferromagnetic (Ga,Mn)As semiconductors. Jungwirth, T.; Sinova, Jairo; Wang, K. Y.; Edmonds, K. W.; Campion, R. P.; Gallagher, B. L.; Foxon, C. T.; Niu, Qian; MacDonald, A. H. // Applied Physics Letters;7/14/2003, Vol. 83 Issue 2, p320 

    We study the dc transport properties of (Ga,Mn)As diluted magnetic semiconductors with Mn concentration varying from 1.5% to 8%. Both diagonal and Hall components of the conductivity tensor are strongly sensitive to the magnetic state of these semiconductors. Transport data obtained at low...

  • Magneto-optical and magnetotransport properties of heavily Mn-doped GaMnAs. Ohya, Shinobu; Ohno, Kenichi; Tanaka, Masaaki // Applied Physics Letters;3/12/2007, Vol. 90 Issue 11, p112503 

    The authors have studied the magneto-optical and magnetotrasnport properties of Ga1-xMnxAs thin films with high Mn concentrations (x=12.2%–21.3%) grown by molecular-beam epitaxy. These heavily Mn-doped GaMnAs films were formed by decreasing the growth temperature to as low as...

Share

Read the Article

Courtesy of VIRGINIA BEACH PUBLIC LIBRARY AND SYSTEM

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics