TITLE

Fabrication and characterization of InGaN p-i-n homojunction solar cell

AUTHOR(S)
Cai, Xiao-mei; Zeng, Sheng-wei; Zhang, Bao-ping
PUB. DATE
October 2009
SOURCE
Applied Physics Letters;10/26/2009, Vol. 95 Issue 17, p173504
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
InxGa1-xN p-i-n homojunction solar cells with different In content are studied. The measured open circuit voltages (Voc) are 2.24, 1.34, and 0.96 V, for x=0.02, 0.12, and 0.15, respectively. By comparing the x-ray rocking curves, the I-V characteristics and the external quantum efficiencies, it’s demonstrated that the deterioration of InGaN crystal quality for larger In contents causes the decrease of Voc. The result demonstrates that reduction of defect is a key factor in the fabrication of nitride solar cell.
ACCESSION #
44909843

 

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