Demonstration of high performance long wavelength infrared type II InAs/GaSb superlattice photodiode grown on GaAs substrate

Pour, S. Abdollahi; Nguyen, B-M.; Bogdanov, S.; Huang, E. K.; Razeghi, M.
October 2009
Applied Physics Letters;10/26/2009, Vol. 95 Issue 17, p173505
Academic Journal
We report the growth and characterization of long wavelength infrared type-II InAs/GaSb superlattice photodiodes with a 50% cut-off wavelength at 11 μm, on GaAs substrate. Despite a 7.3% lattice mismatch to the substrate, photodiodes passivated with polyimide exhibit an R0A value of 35 Ω cm2 at 77 K, which is in the same order of magnitude as reference devices grown on native GaSb substrate. With a reverse applied bias less than 500 mV, the dark current density and differential resistance-area product are close to that of devices on GaSb substrate, within the tolerance of the processing and measurement. The quantum efficiency attains the expected value of 20% at zero bias, resulting in a Johnson limited detectivity of 1.1×1011 Jones. Although some difference in performances is observed, devices grown on GaAs substrate already attained the background limit performance at 77 K with a 300 K background and a 2π field of view.


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