Mg doping and its effect on the semipolar [formula] growth kinetics

Lahourcade, L.; Pernot, J.; Wirthmüller, A.; Chauvat, M. P.; Ruterana, P.; Laufer, A.; Eickhoff, M.; Monroy, E.
October 2009
Applied Physics Letters;10/26/2009, Vol. 95 Issue 17, p171908
Academic Journal
We report the effect of Mg doping on the growth kinetics of semipolar [formula] synthesized by plasma-assisted molecular-beam epitaxy. Mg tends to segregate on the surface, inhibiting the formation of the self-regulated Ga film which is used as a surfactant for the growth of undoped and Si-doped [formula]. We observe an enhancement of Mg incorporation in [formula] compared to GaN(0001). Typical structural defects or polarity inversion domains found in Mg-doped GaN(0001) were not observed for the semipolar films investigated in the present study.


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