TITLE

Correlating dopant distributions and electrical properties of boron-doped silicon nanowires

AUTHOR(S)
Schlitz, Ruth A.; Perea, Daniel E.; Lensch-Falk, Jessica L.; Hemesath, Eric R.; Lauhon, Lincoln J.
PUB. DATE
October 2009
SOURCE
Applied Physics Letters;10/19/2009, Vol. 95 Issue 16, p162101
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Quantitative nonuniform radial doping profiles in vapor liquid solid grown boron-doped silicon nanowires are correlated with axial variations in electrical properties. Boron concentrations measured by atom probe tomography are lower for the core material grown from a gold catalyst than for material deposited on the nanowire surface. Transistors fabricated along a single nanowire exhibit a transition from nonlinear contact-dominated behavior to linear behavior with increasing thickness of the dopant-enriched surface layer. Simple models confirm that the surface is doped to a level that enables the contact resistance to become comparable to the channel resistance, suggesting that unintentional surface doping may play a role in lowering contact resistances in some nanowire devices.
ACCESSION #
44837291

 

Related Articles

  • Air-bridge-structured silicon nanowire and anomalous conductivity. Fujii, Hideo; Kanemaru, Seigo; Matsukawa, Takashi; Itoh, Junji // Applied Physics Letters;12/20/1999, Vol. 75 Issue 25, p3986 

    Presents a study that made an air-bridge-structured silicon nanowire from micromachining a silicon-on-insulator substrate. Isolation of the nanowire from the substrate by an air gap; Current-voltage characteristics of the nanowires; Negative resistance and hysteresis at room temperature.

  • Biomedical nanoelectronics get a boost from alumina-protected silicon nanowires.  // American Ceramic Society Bulletin;Apr2014, Vol. 93 Issue 3, p16 

    The article discusses a new engineering method of encasing silicon nanowires in alumina shells to make biomedical silicon nanowire nanoelectronics more stable. A research by a group from Harvard University written by Wei Zhou and Xiaochuan Dai published in "Nano Letters" showed that the method...

  • Surface effect on the bandgap of BN one-dimensional nanostructures. Li, S.; Yang, G. W. // Journal of Applied Physics;Aug2011, Vol. 110 Issue 3, p034317 

    We have presented a comprehensive first-principles investigation of the structural stability and electronic structure of one-dimensional boron nitride (BN) nanostructures including nanowires (NWs), facet-nanotubes (FNTs), and nanoholes inside bulk BN. It was found that the binding energy Eb of...

  • Boron Nanowires for Flexible Electronics and Field Emission. Jifa Tian; Jinming Cai; Chao Hui; Chen Li; Yuan Tian; Chengmin Shen; Hongjun Gao // AIP Conference Proceedings;9/28/2009, Vol. 1173 Issue 1, p317 

    Development of a rational synthetic method of flexible nanomaterials may enable exciting avenues in both fundamental research and novel device applications. In this paper, flexible boron nanowires have been successfully synthesized on both Si (111) and scanning tunneling microscope (STM)...

  • Synthesis of Si2N2O nanowires in porous Si2N2O-Si3N4 substrate using Si powder. Byong-Taek Lee; Rajat Kanti Paul; Kap-Ho Lee; Hai-Doo Kim // Journal of Materials Research;Mar2007, Vol. 22 Issue 3, p4 

    The formation of synthesized Si2N2O nanowires using the process of Si nitridation depending on the addition of carbon was investigated. The diameter of the Si2N2O nanowires having a high aspect ratio of about 50-80 nm was found in the porous Si2N2O-Si3N4 substrate to which 6 wt% C was added. The...

  • Si-N-C Nanowires Derived by Polyhydridomethylsilazane Pyrolysis. Gongjin Qi // Materials Sciences & Applications;Jul2011, Vol. 2 Issue 7, p936 

    The preceramic polymer, polyhydridomethylsilazane, was synthesized and pyrolyzed at 1873 K in nitrogen atmosphere to prepare Si-N-C nanowires without using any catalysts. The diameters of the nanowires were from tens of nanometers to several microns, and the maximum length of the nanowires...

  • Silicon and nickel combine to make conductive nanowires.  // Advanced Materials & Processes;Sep2004, Vol. 162 Issue 9, p18 

    Reports on the combining of silicon and nickel to make conductive nanowires for computer circuits. Specifications; Applications; Contact information.

  • Nonuniform doping distribution along silicon nanowires measured by Kelvin probe force microscopy and scanning photocurrent microscopy. Koren, E.; Rosenwaks, Y.; Allen, J. E.; Hemesath, E. R.; Lauhon, L. J. // Applied Physics Letters;8/31/2009, Vol. 95 Issue 9, p092105 

    We use Kelvin probe force microscopy and scanning photocurrent microscopy to measure the doping distribution along single phosphorous-doped silicon nanowire grown by the vapor-liquid-solid method. A nonlinear potential drop along biased silicon nanowires is detected both by measuring the surface...

  • Mechanical properties of vertically aligned single-crystalline silicon nanowire arrays. Cuevas, Ana; Dalchiele, Enrique Ariel; Marotti, Ricardo; Leinen, Dietmar; Ramos-Barrado, José Ramón; Martin, Francisco // Journal of Materials Research;5/14/2011, Vol. 26 Issue 9, p1091 

    Single-crystalline p-type silicon nanowire (SiNW) arrays have been formed by electroless metal deposition on a silicon wafer piece in an ionic Ag/fluorhydric acid (HF) solution through selective etching. They display mechanical properties that are different from those of both bulk silicon and...

Share

Read the Article

Courtesy of THE LIBRARY OF VIRGINIA

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics