Correlating dopant distributions and electrical properties of boron-doped silicon nanowires

Schlitz, Ruth A.; Perea, Daniel E.; Lensch-Falk, Jessica L.; Hemesath, Eric R.; Lauhon, Lincoln J.
October 2009
Applied Physics Letters;10/19/2009, Vol. 95 Issue 16, p162101
Academic Journal
Quantitative nonuniform radial doping profiles in vapor liquid solid grown boron-doped silicon nanowires are correlated with axial variations in electrical properties. Boron concentrations measured by atom probe tomography are lower for the core material grown from a gold catalyst than for material deposited on the nanowire surface. Transistors fabricated along a single nanowire exhibit a transition from nonlinear contact-dominated behavior to linear behavior with increasing thickness of the dopant-enriched surface layer. Simple models confirm that the surface is doped to a level that enables the contact resistance to become comparable to the channel resistance, suggesting that unintentional surface doping may play a role in lowering contact resistances in some nanowire devices.


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