Real time monitoring of the interaction of Si (100) with atomic hydrogen: The “H-insertion/Si-etching” kinetic model explaining Si surface modifications

Bianco, Giuseppe V.; Losurdo, Maria; Giangregorio, Maria M.; Capezzuto, Pio; Bruno, Giovanni
October 2009
Applied Physics Letters;10/19/2009, Vol. 95 Issue 16, p161501
Academic Journal
The interaction of p- and n-type crystalline silicon [c-Si (100)], with atomic hydrogen produced by a remote radiofrequency (13.56 MHz) H2 plasma has been investigated in real time using in situ spectroscopic ellipsometry. The effects of substrate doping, temperature and time on the c-Si surface modifications are discussed. A thicker hydrogenated surface layer forms for n-type Si. This hydrogenated layer is subsequently etched by further exposure to hydrogen. A kinetic model based on the competition between hydrogen insertion and silicon etching is proposed to explain modifications of c-Si, and the rate constants of the hydrogen insertion and silicon etching processes are determined.


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