n-type β-FeSi2/intrinsic-Si/p-type Si heterojunction photodiodes for near-infrared light detection at room temperature

Shaban, Mahmoud; Izumi, Shota; Nomoto, Keita; Yoshitake, Tsuyoshi
October 2009
Applied Physics Letters;10/19/2009, Vol. 95 Issue 16, p162102
Academic Journal
n-Type β-FeSi2/intrinsic-Si/p-type Si heterojunctions, prepared by facing-targets direct-current sputtering, were evaluated as near-infrared photodetectors. The built-in potential was estimated to be approximately 1 V from capacitance-voltage characteristics. Diodes with a junction area of 0.03 mm2 exhibited a junction capacitance of 4.4 pF at zero bias. At room temperature, the devices exhibited responsivity of 140 mA/W and external quantum efficiency of 13% at a bias voltage of -5 V. The detectivity at zero bias was estimated to be 2.8×109 cm[Square_Root]Hz/W at the wavelength of 1.31 μm. These results indicate their high application potential as near-infrared photodiodes integrated with Si.


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