Band offsets of HfO2/ZnO interface: In situ x-ray photoelectron spectroscopy measurement and ab initio calculation

Chen, Q.; Yang, M.; Feng, Y. P.; Chai, J. W.; Zhang, Z.; Pan, J. S.; Wang, S. J.
October 2009
Applied Physics Letters;10/19/2009, Vol. 95 Issue 16, p162104
Academic Journal
High quality HfO2 dielectrics have been grown on ZnO (0001) substrates. The valence- and conduction-band offsets for HfO2/ZnO (0001) heterojunctions have been determined to be 0.14±0.05 and 2.29±0.05 eV, respectively, by using in situ x-ray photoemission spectroscopy. First-principles calculations show that the valence-band offset at the HfO2/ZnO (0001) interface of the most energetically favorable interface structure is 0.40 eV, which is consistent with the experimental results.


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