TITLE

First-principles study of the electronic properties of Ge dangling bonds at (100)Si1-xGex/SiO2 interfaces

AUTHOR(S)
Houssa, M.; Afanas'ev, V. V.; Stesmans, A.; Pourtois, G.; Meuris, M.; Heyns, M. M.
PUB. DATE
October 2009
SOURCE
Applied Physics Letters;10/19/2009, Vol. 95 Issue 16, p162109
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
First-principles calculations of the electronic properties of (100)Si1-xGex/SiO2 structures, with a Ge dangling bond at the interface, are reported. It is found that the defect level associated with this dangling bond approaches the valence band edge of the Si1-xGex substrate as the Si concentration is reduced, mainly due to the narrowing of the energy bandgap of the alloy. These results suggest that these dangling bonds likely behave as acceptor-type defects at Ge-rich (100)Si1-xGex interfaces.
ACCESSION #
44837242

 

Related Articles

Share

Read the Article

Courtesy of VIRGINIA BEACH PUBLIC LIBRARY AND SYSTEM

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics