TITLE

Strain-induced microstructural evolution in epitaxial Fe/MgO layers grown on InxGa1-xAs(001) substrates

AUTHOR(S)
Kyung-ho Kim; Hyung-jun Kim; Gyeung-Ho Kim; Joonyeon Chang; Suk-hee Han
PUB. DATE
October 2009
SOURCE
Applied Physics Letters;10/19/2009, Vol. 95 Issue 16, p164103
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Epitaxial Fe/MgO layers have been grown on InxGa1-xAs substrates to examine the epitaxial relationship and the morphological variation with respect to indium content, x and the growth temperature of MgO interlayer. The in-plane epitaxial relationship of Fe[010]//MgO[110]//InxGa1-xAs[110] is found in the structures of all x values for 4 nm thick MgO layers grown at room temperature. Epitaxial MgO interlayers grow in two-dimensional layer regardless of x while the morphology of subsequent Fe changes from two-dimensional layer to three-dimensional islands with the increase of x. Furthermore, the average size of Fe islands becomes smaller at higher x value due to enhanced underlying strain. The elevated growth temperature of MgO has led to partial strain relaxation, resulting in the suppression of three-dimensional Fe island formation.
ACCESSION #
44837235

 

Related Articles

  • Usage of antimony segregation for selective doping of Si in molecular beam epitaxy. Yurasov, D. V.; Drozdov, M. N.; Murel, A. V.; Shaleev, M. V.; Zakharov, N. D.; Novikov, A. V. // Journal of Applied Physics;Jun2011, Vol. 109 Issue 11, p113533 

    An original approach to selective doping of Si by antimony (Sb) in molecular beam epitaxy (MBE) is proposed and verified experimentally. This approach is based on controllable utilization of the effect of Sb segregation. In particular, the sharp dependence of Sb segregation on growth temperature...

  • Effect of sapphire substrate orientation on the surface morphology and structural quality of thick GaN layers grown by hydride vapor phase epitaxy. Donskov, A.; Dyakonov, L.; Kozlova, Yu.; Malakhov, S.; Mezhennyi, M.; Pavlov, V.; Yugova, T. // Crystallography Reports;Mar2011, Vol. 56 Issue 2, p274 

    The effect of substrate orientation on the surface orientation of thick GaN layers grown by hydride vapor phase epitaxy (HVPE) has been established. Layers oriented along the (0001), (11 $$ \bar 2 $$0), and (10 $$ \bar 1 $$3) planes have been obtained on, respectively, c- and a-, r-, and...

  • Graphene growth on metal surfaces. Bartelt, N.C.; McCarty, K.F. // MRS Bulletin;Dec2012, Vol. 37 Issue 12, p1158 

    The exceptional properties of graphene originate from its two-dimensional polymeric structure of sp2-bonded carbon. This feature also causes graphene to grow on metal substrates through mechanisms that are strikingly different from those of conventional heteroepitaxy. We provide here a brief...

  • Indium Nitride (InN) Nanostructures Grown by Plasma-Assisted Molecular Beam Epitaxy (PAMBE). Sinha, Neeraj; Jali, V. M.; Bhat, Thirumaleshwara N.; Roul, Basanta; Kumar, Mahesh; Rajpalke, Mohana K.; Krupanidhi, S. B. // AIP Conference Proceedings;12/12/2011, Vol. 1393 Issue 1, p77 

    Indium nitride (InN) is an interesting and potentially important semiconductor material with superior electronic transport properties. Compared to all other group III-nitrides, InN possesses the lowest effective mass, the highest mobility, the highest saturation velocity and narrow band gap of...

  • Spontaneous transition in preferred orientation of GaN domains grown on r-plane sapphire substrate from [1120] to [0001]. Hyun-Jae Lee; Jun-Seok Ha; Goto, T.; Yao, T.; Chinkyo Kim; Soon-Ku Hong; Jiho Chang // Applied Physics Letters;3/9/2009, Vol. 94 Issue 10, pN.PAG 

    GaN films were grown at 550 °C and subsequently at 1040 °C on sapphire (1012) (r-plane) substrates by using hydride vapor phase epitaxy with different layer thicknesses. As the thickness of a low-temperature-grown GaN layer was increased, a preferred orientation of GaN...

  • GaN stripes on vertical {111} fin facets of (110)-oriented Si substrates. Kuryatkov, V. V.; Feng, W.; Pandikunta, M.; Woo, J. H.; Garcia, D.; Harris, H. R.; Nikishin, S. A.; Holtz, M. // Applied Physics Letters;2/15/2010, Vol. 96 Issue 7, p073107 

    Selective sidewall epitaxy of AlN/GaN is reported on vertical fins of silicon using metallorganic vapor phase epitaxy. Silicon (110) wafers are structured to form fins with {111} sidewall facets. AlN buffer layers are grown with uniform thickness on vertical {111} surfaces, followed by GaN which...

  • Spontaneous compliance of the InP/SrTiO3 heterointerface. Saint-Girons, G.; Priester, C.; Regreny, P.; Patriarche, G.; Largeau, L.; Favre-Nicolin, V.; Xu, G.; Robach, Y.; Gendry, M.; Hollinger, Guy // Applied Physics Letters;6/16/2008, Vol. 92 Issue 24, p241907 

    The lattice mismatch between a growing layer and its substrate is a major limitation for heteroepitaxy. Finding solutions to overcome this limitation has given rise to many researches that have up to now not come out any satisfying solution. Here we demonstrate the compliant behavior of the...

  • Repeated epitaxial growth and transfer of arrays of patterned, vertically aligned, crystalline Si wires from a single Si(111) substrate. Spurgeon, Joshua M.; Plass, Katherine E.; Kayes, Brendan M.; Brunschwig, Bruce S.; Atwater, Harry A.; Lewis, Nathan S. // Applied Physics Letters;7/21/2008, Vol. 93 Issue 3, p032112 

    Multiple arrays of Si wires were sequentially grown and transferred into a flexible polymer film from a single Si(111) wafer. After growth from a patterned, oxide-coated substrate, the wires were embedded in a polymer and then mechanically separated from the substrate, preserving the array...

  • Metal organic vapor phase epitaxy growth of single crystalline GaN on planar Si(211) substrates. Ravash, Roghaiyeh; Bl&äsing, Jürgen; Hempel, Thomas; Noltemeyer, Martin; Dadgar, Armin; Christen, Jürgen; Krost, Alois // Applied Physics Letters;12/14/2009, Vol. 95 Issue 24, p242101 

    We present metal organic vapor phase epitaxy growth of polarization reduced, wurtzitic gallium nitride layers with an 18° inclination of the c-axis to the surface normal on planar Si(211) substrates. The growth of this layer is performed as c-axis oriented growth on the naturally occurring...

Share

Read the Article

Courtesy of VIRGINIA BEACH PUBLIC LIBRARY AND SYSTEM

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics