TITLE

Blueshift of intersubband transition wavelength in AlN/GaN multiple quantum wells by low temperature metal organic vapor phase epitaxy using pulse injection method

AUTHOR(S)
Jung-Seung Yang; Sodabanlu, Hassanet; Sugiyama, Masakazu; Nakano, Yoshiaki; Shimogaki, Yukihiro
PUB. DATE
October 2009
SOURCE
Applied Physics Letters;10/19/2009, Vol. 95 Issue 16, p162111
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
AlN/GaN multiquantum wells (MQWs) were grown at different growth temperatures via a metal organic vapor phase epitaxy (MOVPE) system using a pulse injection method and their intersubband transition (ISBT) properties were investigated. Strong ISBT at 1.58 μm measured at room temperature was realized with MQWs grown at 770 °C and its absorption properties was the best reported in MOVPE system using GaN buffer layer. Clear blueshift of ISB absorption wavelength by lowering growth temperature was observed, which suggests that interdiffusion within MQWs was suppressed at lower growth temperatures.
ACCESSION #
44837230

 

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