Efficient hole transport in asymmetric coupled InGaN multiple quantum wells

Jiang-Yong Zhang; Cai, Li-E.; Bao-Ping Zhang; Xiao-Long Hu; Fang Jiang; Jin-Zhong Yu; Qi-Ming Wang
October 2009
Applied Physics Letters;10/19/2009, Vol. 95 Issue 16, p161110
Academic Journal
InGaN based light emitting devices (LEDs) with asymmetric coupled quantum wells (AS-QWs) and conventional symmetric coupled quantum wells (CS-QWs) active structures were grown by metal-organic chemical vapor deposition technique. The LEDs with AS-QWs active region show improved light emission intensity and reduced forward voltage compared with LEDs with CS-QWs active region. Based on the electroluminescence measurements and the devices structure analysis, it can be concluded that these improvements are mainly attributed to the efficient hole tunneling through barriers and consequently the uniform distribution of carriers in the AS-QWs.


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