Magnetic tunnel junction on a ferroelectric substrate

Pertsev, N. A.; Kohlstedt, H.
October 2009
Applied Physics Letters;10/19/2009, Vol. 95 Issue 16, p163503
Academic Journal
The concept of a magnetic tunnel junction fabricated on a ferroelectric substrate is described theoretically. It is shown that the application of a moderate electric field to a substrate having strong piezoelectric response may induce an in-plane magnetization rotation in a ferromagnetic electrode made of a highly magnetostrictive cubic material with small magnetocrystalline anisotropy. Remarkably, an abrupt change of the junction’s electrical resistance can result from the substrate-induced magnetization reorientation in the free ferromagnetic layer. Hence the described hybrid multiferroic device may be employed as an electric-write nonvolatile magnetic memory cell with nondestructive readout.


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