Features of two-dimensional to three-dimensional growth mode transition of Ge in SiGe/Si(001) heterostructures with strained layers

Yurasov, D. V.; Drozdov, Yu. N.; Shaleev, M. V.; Novikov, A. V.
October 2009
Applied Physics Letters;10/12/2009, Vol. 95 Issue 15, p151902
Academic Journal
The results of the study of the effect of strained SiGe layers on the critical thickness of two-dimensional growth of Ge layer in different SiGe/Si(001) structures are presented. A significant influence of buried strained SiGe layer on the growth of Ge has been found out, which remains considerable even for SiGe layers capped by unstrained Si layer of thickness up to 3.5 nm. The experimental results are well described by the proposed model, where obtained features are explained by means of introducing a phenomenological parameter called “effective decay length” of the strain energy accumulated in the structure.


Related Articles

  • Special features of formation of high-performance semiconductor detectors based on αSi-Si(Li) heterostructures. Muminov, R.; Saymbetov, A.; Toshmurodov, Yo. // Instruments & Experimental Techniques;Jan2013, Vol. 56 Issue 1, p32 

    A production technology of nuclear radiation detectors based on αSi-Si(Li) heterostructures is considered. It is shown that these detectors are more efficient as compared to traditional p-n structures due to a thin near-surface ('dead') layer.

  • Electroabsorption spectroscopy of well and barrier materials in amorphous semiconductor superlattices. Roxlo, C. B.; Abeles, B.; Persans, P. D. // Applied Physics Letters;1984, Vol. 45 Issue 10, p1132 

    Electroabsorption spectra of well and barrier regions have been separately determined in hydrogenated amorphous silicon/silicon carbide superlattices by taking advantage of built-in electric fields. Significant energy shifts are observed in materials with thin (<40 Ã…) layers. The data are...

  • Formation of zero-dimensional hole states during molecular-beam epitaxy of Ge on Si (100). Yakimov, A. I.; Dvurechenskii, A. V.; Nikiforov, A. I.; Pchelyakov, O. P. // JETP Letters;7/25/98, Vol. 68 Issue 2, p135 

    The characteristic features of electronic spectra in Ge/Si (100) heterostructures obtained by molecular-beam epitaxy are investigated by capacitance spectroscopy. It is observed that the self-organization of a Ge film into an island film when the effective germanium thickness exceeds six...

  • 40 Gb/s surface-illuminated Ge-on-Si photodetectors. Osmond, Johann; Vivien, Laurent; Fédéli, Jean-Marc; Marris-Morini, Delphine; Crozat, Paul; Damlencourt, Jean-François; Cassan, Eric; Lecunff, Y. // Applied Physics Letters;10/12/2009, Vol. 95 Issue 15, p151116 

    This paper reports on surface illuminated Ge photodetectors monolithically integrated on Si substrate operating in the C and L wavelength bands. The responsivity at a wavelength of 1.5 μm ranges from 0.08 to 0.21 A/W without bias voltage for Ge mesa diameter ranging from 10 to 25 μm,...

  • Degradation of active region in InGaAsP/InP buried heterostructure lasers. Fukuda, Mitsuo; Iwane, Genzo // Journal of Applied Physics;10/15/1985, Vol. 58 Issue 8, p2932 

    Deals with the degradation of active region in InGaAsP/InP buried heterostructure lasers. Relationships among the lasing characteristic degradation; Description of the injected carrier lifetime decrease; Cause of the degradation.

  • The identification of dark-line defects in AlGaAs/InGaAs/GaAs heterostructures. Fitzgerald, E. A.; Ashizawa, Y.; Eastman, L. F.; Ast, D. G. // Journal of Applied Physics;5/15/1988, Vol. 63 Issue 10, p4925 

    Focuses on a study which investigated the correlation between the structure of and the nonradiative recombination at defects in AlGaAs/InGaAs/GaAs heterostructures. Experimental method for detecting the critical layer thickness in the InGaAs/GaAs system; Results; Conclusion.

  • Increased thermal budget for selectively doped heterostructures by employing AlAs/GaAs superlattices. Reuter, D.; Meier, C.; Álvarez, M. A. Serrano; Wieck, A. D. // Applied Physics Letters;7/16/2001, Vol. 79 Issue 3, p377 

    The degradation of selectivity doped Al[sub 0.35]Ga[sub 0.65]As/GaAs heterostructures caused by rapid thermal annealing (RTA) was studied. The samples were annealed for 30 s at temperatures between 600 °C and 850 °C. Thereafter, the samples were characterized by Hall measurements at room...

  • Long-wavelength nonpolar phonons in semiconductor heterostructures. De Léon-Pérez, F.; Pérez-Alvarez, R. // European Physical Journal B -- Condensed Matter;Nov2004, Vol. 41 Issue 4, p451 

    Employing a phenomenological long-wavelength approach recently developed, both acoustic and optical phonons in nonpolar heterostructures are studied. Phonon modes in an arbitrary direction can be calculated without additional effort respect to high symmetry directions. A simple analytical...

  • Electrical Properties of Ag/Tl–Ba–Ca–CuO/CdSe Heterostructures. Shirage, P. M.; Shivagan, D. D.; Pawar, S. H. // Journal of Superconductivity & Novel Magnetism;Jul2009, Vol. 22 Issue 5, p455 

    Tl2Ba2Ca2Cu3O $_{1\tilde{0}}$ superconducting films are electrochemically deposited onto Ag-substrate followed by the semiconducting CdSe. The metal–superconducting-semiconductor heterostructure has been imprinted and the electrical properties of the junctions implied have been analyzed...


Read the Article


Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics