ZnO-based metal-semiconductor field-effect transistors on glass substrates

Frenzel, H.; Lorenz, M.; Lajn, A.; von Wenckstern, H.; Biehne, G.; Hochmuth, H.; Grundmann, M.
October 2009
Applied Physics Letters;10/12/2009, Vol. 95 Issue 15, p153503
Academic Journal
We investigate the influence of quartz glass and borosilicate glass substrates on the electrical properties of ZnO-based metal-semiconductor field-effect transistors (MESFETs). The n-type ZnO thin-film channels were grown by pulsed-laser deposition and MESFETs were processed by reactive dc sputtering of AgxO-Schottky gate contacts. All devices are in the normally-off state. They exhibit very low off-currents in the range of 10-13 A and on/off ratios of maximum 6 decades. The channel mobilities are highest for ZnO on quartz with 1.3 cm2/Vs. The glass substrates introduce a compensating effect on the conduction of the ZnO channel resulting in higher on/off-voltages and lower on-current.


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