TITLE

Effect of injection current density on electroluminescence in silicon quantum dot light-emitting diodes

AUTHOR(S)
Baek Hyun Kim; Davis, Robert F.; Chang-Hee Cho; Seong-Ju Park
PUB. DATE
October 2009
SOURCE
Applied Physics Letters;10/12/2009, Vol. 95 Issue 15, p153103
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
We report the effect of injection current density on the electroluminescence (EL) from silicon quantum dot (QD) light-emitting diodes. The EL spectra as a function of injection current density were blueshifted and broad. These results are attributed to both the increase in the contribution of small Si QDs in the silicon nitride film due to the increase in the injection current density and the recombination of electron-hole pairs between excited states in the Si QDs due to band bending under high bias.
ACCESSION #
44665222

 

Related Articles

  • Midinfrared electroluminescence from pentanary-quaternary heterojunction light-emitting diodes. Cook, N. B.; Krier, A. // Applied Physics Letters;7/13/2009, Vol. 95 Issue 2, p021110 

    InAs-GaInAsSbP-InAsSbP double heterojunction light-emitting diodes were fabricated which exhibit electroluminescence near 3.7 μm at room temperature. Radiative recombination from band-tail states associated with alloy disorder and localized potential fluctuations was observed, as well as...

  • Light-emitting diodes: A bright outlook for quantum dots. Mews, Alf; Jialong Zhao // Nature Photonics;Dec2007, Vol. 1 Issue 12, p683 

    The article looks into the impact of the improved performance of light emitting diodes (LEDs) based on multilayers of quantum dots (QDs). It focuses on high-quality multicolor QD-LEDs of researchers from China and the U.S. reflecting the role of detailed nanoengineering of available materials in...

  • Bright, multicoloured light-emitting diodes based on quantum dots. Qingjiang Sun; Wang, Y. Andrew; Lin Song Li; Daoyuan Wang; Ting Zhu; Jian Xu; Chunhe Yang; Yongfang Li // Nature Photonics;Dec2007, Vol. 1 Issue 12, p717 

    Quantum-dot-based LEDs are characterized by pure and saturated emission colours with narrow bandwidth, and their emission wavelength is easily tuned by changing the size of the quantum dots. However, the brightness, efficiency and lifetime of LEDs need to be improved to meet the requirements of...

  • Visible electroluminescence from hybrid colloidal silicon quantum dot-organic light-emitting diodes. Tu, Chang-Ching; Tang, Liang; Huang, Jiangdong; Voutsas, Apostolos; Lin, Lih Y. // Applied Physics Letters;5/23/2011, Vol. 98 Issue 21, p213102 

    We demonstrate hybrid colloidal silicon quantum dot (SiQD)-organic light-emitting diodes with electroluminescence (EL) in the visible wavelengths. The device using blue photoluminescence (PL) SiQDs as emitters shows multiple EL peaks which are attributed to carrier recombination in the core...

  • Pulsed Electrical Spin Injection into InGaAs Quantum Dots: Studies of the Electroluminescence Polarization Dynamics. Asshoff, P.; Löffler, W.; Flügge, H.; Zimmer, J.; Müller, J.; Westenfelder, B.; Hu, D. Z.; Schaadt, D. M.; Kalt, H.; Hetterich, M. // AIP Conference Proceedings;1/4/2010, Vol. 1199 Issue 1, p383 

    We present time-resolved studies of the spin polarization dynamics during and after initialization through pulsed electrical spin injection into InGaAs quantum dots embedded in a p-i-n-type spin-injection light-emitting diode. Experiments are performed with pulse widths in the nanosecond range...

  • Origin of InGaN/GaN light-emitting diode efficiency improvements using tunnel-junction-cascaded active regions. Piprek, Joachim // Applied Physics Letters;2/3/2014, Vol. 104 Issue 5, p051118-1 

    This Letter investigates the efficiency enhancement achieved by tunnel junction insertion into the InGaN/GaN multi-quantum well (MQW) active region of blue light emitting diodes (LEDs). The peak quantum efficiency of such LED exceeds 100%, but the maximum wall-plug efficiency (WPE) hardly...

  • External efficiency and carrier loss mechanisms in InAs/GaInNAs quantum dot light-emitting diodes. Montes, M.; Hierro, A.; Ulloa, J. M.; Guzmán, A.; Al Khalfioui, M.; Hugues, M.; Damilano, B.; Massies, J. // Journal of Applied Physics;Aug2010, Vol. 108 Issue 3, p033104 

    The electroluminescence (EL) characteristics of a set of InAs/GaInNAs quantum dot (QD) light-emitting diodes with varying In and N contents are analyzed. Room-temperature EL around 1.5 μm is obtained with 15% In and 2% N in the QD capping layer. It is shown that the addition of N results in a...

  • Stark shift in electroluminescence of individual InAs quantum dots. Itskevich, I. E.; Itskevich, I.E.; Rybchenko, S. I.; Rybchenko, S.I.; Tartakovskii, I. I.; Tartakovskii, I.I.; Stoddart, S. T.; Stoddart, S.T.; Levin, A.; Main, P. C.; Main, P.C.; Eaves, L.; Henini, M.; Parnell, S. // Applied Physics Letters;6/26/2000, Vol. 76 Issue 26 

    We have fabricated light-emitting-diode heterostructure devices, in which a layer of InAs self-assembled quantum dots is embedded, with an active area of submicron size. In the electroluminescence spectra of these devices, we observed isolated narrow peaks due to emission from individual dots....

  • Room-temperature electroluminescence at 1.3 and 1.5 μm from Ge/Si self-assembled quantum dots. Chang, W.-H.; Chou, A.T.; Chen, W.Y.; Chang, H.S.; Hsu, T.M.; Pei, Z.; Chen, P.S.; Lee, S.W.; Lai, L.S.; Lu, S.C.; Tsai, M.-J. // Applied Physics Letters;10/6/2003, Vol. 83 Issue 14, p2958 

    Room-temperature electroluminescence at 1.3 and 1.5 μm from Ge/Si quantum-dot light-emitting diodes is reported. The devices were fabricated in a mesa-type structure, with a silicon oxide layer on the top for surface/sidewall passivation. Different passivation processes were employed. We...

Share

Read the Article

Courtesy of VIRGINIA BEACH PUBLIC LIBRARY AND SYSTEM

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics