TITLE

Thermal rectification at water/functionalized silica interfaces

AUTHOR(S)
Ming Hu; Goicochea, Javier V.; Michel, Bruno; Poulikakos, Dimos
PUB. DATE
October 2009
SOURCE
Applied Physics Letters;10/12/2009, Vol. 95 Issue 15, p151903
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Using nonequilibrium molecular dynamics simulations, we study the thermal diode effect in a system composed of silica, self-assembled monolayers (SAMs) at the silica surface and water surrounding this system, by imposing a series of positive and negative heat currents. We have found that in the limit of large heat currents, the thermal conductance at the SAMs-water interface is about 1000 MW/m2 K at room temperature for heat flowing from the SAMs to the water and 650 MW/m2 K for heat flowing from the water to the SAMs, respectively, resulting in a thermal rectification of up to 54%. Analysis of the radial distribution function of oxygen-oxygen atoms in water indicates that the origin of the thermal rectification resides in the strong temperature dependence of the hydrogen bonds in water.
ACCESSION #
44665218

 

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