TITLE

In situ passivation of InP surface using H2S during metal organic vapor phase epitaxy

AUTHOR(S)
Lu, Hong-Liang; Terada, Yuki; Shimogaki, Yukihiro; Nakano, Yoshiaki; Sugiyama, Masakazu
PUB. DATE
October 2009
SOURCE
Applied Physics Letters;10/12/2009, Vol. 95 Issue 15, p152103
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
An in situ surface passivation of InP(100) using H2S during metal organic vapor phase epitaxy has been characterized by x-ray photoemission spectroscopy and photoluminescence. X-ray photoelectron spectra indicate that the H2S-treated InP at 300 °C is free of P and In oxides even after exposure to air. The enhancement of photoluminescence intensity confirms that H2S passivation of an InP epilayer can reduce the surface defects. It is shown that H2S treatment results in In–S bonds, which dominate the sulfur-passivated InP surface, effectively suppressing interface oxidation during the subsequent ultrathin Al2O3 dielectric film growth.
ACCESSION #
44665216

 

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