The significance of core-level electron binding energies on the proper analysis of InGaAs interfacial bonding

Hinkle, C. L.; Milojevic, M.; Vogel, E. M.; Wallace, R. M.
October 2009
Applied Physics Letters;10/12/2009, Vol. 95 Issue 15, p151905
Academic Journal
The detection and removal of interfacial oxides on InGaAs semiconductors is of critical importance for their implementation as high-mobility channels for improved complementary metal oxide semiconductor device performance. X-ray photoelectron spectroscopy is a powerful tool to determine the chemical bonding at these interfaces. To correctly analyze these spectra, one must consider the binding energies and escape depths of the core-level electrons being detected, as monolayer level interfacial oxides (As–O and Ga–O) are detectable only in certain surface sensitive spectral regions. Also, inherent asymmetries associated with the In spectra must be taken into account for analysis of In-oxide bonding.


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