TITLE

The significance of core-level electron binding energies on the proper analysis of InGaAs interfacial bonding

AUTHOR(S)
Hinkle, C. L.; Milojevic, M.; Vogel, E. M.; Wallace, R. M.
PUB. DATE
October 2009
SOURCE
Applied Physics Letters;10/12/2009, Vol. 95 Issue 15, p151905
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
The detection and removal of interfacial oxides on InGaAs semiconductors is of critical importance for their implementation as high-mobility channels for improved complementary metal oxide semiconductor device performance. X-ray photoelectron spectroscopy is a powerful tool to determine the chemical bonding at these interfaces. To correctly analyze these spectra, one must consider the binding energies and escape depths of the core-level electrons being detected, as monolayer level interfacial oxides (As–O and Ga–O) are detectable only in certain surface sensitive spectral regions. Also, inherent asymmetries associated with the In spectra must be taken into account for analysis of In-oxide bonding.
ACCESSION #
44665198

 

Related Articles

  • Carrier distribution in InGaN/GaN tricolor multiple quantum well light emitting diodes. Charash, R.; Maaskant, P. P.; Lewis, L.; McAleese, C.; Kappers, M. J.; Humphreys, C. J.; Corbett, B. // Applied Physics Letters;10/12/2009, Vol. 95 Issue 15, p151103 

    Carrier transport in InGaN light emitting diodes has been studied by comparing the electroluminescence (EL) from a set of triple quantum well structures with different indium content in each well, leading to multicolor emission. Both the sequence and width of the quantum wells have been varied....

  • Electrical characteristics of metal-oxide-semiconductor capacitors on p-GaAs using atomic layer deposition of ultrathin HfAlO gate dielectric. Rahul Suri; Bongmook Lee; Lichtenwalner, Daniel J.; Biswas, Nivedita; Misra, Veena // Applied Physics Letters;11/10/2008, Vol. 93 Issue 19, p193504 

    Properties of ultrathin HfAlO gate dielectrics on sulfur-passivated p-GaAs were investigated using capacitance-voltage and current-voltage measurement techniques and angle-resolved x-ray photoelectron spectroscopy. By optimizing the individual layer thickness of atomic-layer deposited Al2O3 and...

  • Excited states of the 3d transition metal monoxides. Dai, Bing; Deng, Kaiming; Yang, Jinlong; Zhu, Qingshi // Journal of Chemical Physics;6/1/2003, Vol. 118 Issue 21, p9608 

    The electron affinities and low-lying excited states of all the 3d transition metal monoxide molecules are studied using the density functional theory (DFT) and time-dependent (TD) DFT method. The calculated results are compared with the available theoretical ones and used to assign the features...

  • Memory characteristics of metal-oxide-semiconductor capacitor with high density cobalt nanodots floating gate and HfO2 blocking dielectric. Yanli Pei; Chengkuan Yin; Kojima, Toshiya; Nishijima, Masahiko; Fukushima, Takafumi; Tanaka, Tetsu; Koyanagi, Mitsumasa // Applied Physics Letters;7/20/2009, Vol. 95 Issue 3, p033118 

    In this letter, cobalt nanodots (Co-NDs) had been formed via a self-assembled nanodot deposition. High resolution transmission electron microscopy and x-ray photoelectron spectroscopy analyses clearly show that the high metallic Co-ND is crystallized with small size of ∼2 nm and high...

  • Oxidant prepulsing of Ge (100) prior to atomic layer deposition of Al2O3: In situ surface characterization. Swaminathan, Shankar; Oshima, Yasuhiro; Kelly, Michael A.; McIntyre, Paul C. // Applied Physics Letters;7/20/2009, Vol. 95 Issue 3, p032907 

    We investigate the effects of H2O oxidant pulsing of Ge (100) substrates prior to Al2O3 atomic layer deposition (ALD) to synthesize metal-oxide-semiconductor devices. The prepulsing reduces the hysteresis in capacitance-voltage measurements from 490 to 30 mV at the flatband voltage and appears...

  • Oxygen defects and Fermi level location in metal-hafnium oxide-silicon structures. Daeyoung Lim; Haight, Richard; Copel, Matthew; Cartier, Eduard // Applied Physics Letters;8/15/2005, Vol. 87 Issue 7, p072902 

    We describe an in situ method for measuring the band bending of Si substrates in complex metal-oxide-semiconductor systems using femtosecond pump-probe photoelectron spectroscopy. Following deposition of metal layers (Pt, Re, or Re oxide) on the high-k dielectric HfO2, measurement of the band...

  • Forward scattering in hard X-ray photoelectron spectroscopy: Structural investigation of buried Mn-Ga films. ViolBarbosa, Carlos E.; Ouardi, Siham; Takahide Kubota; Shigemi Mizukami; Fecher, Gehard H.; Terunobu Miyazaki; Ikenaga, Eiji; Felser, Claudia // Applied Physics Letters;2/2/2015, Vol. 106 Issue 5, p1 

    X-ray photoelectron diffraction (XPD) in combination with hard X-ray photoelectron spectroscopy (HAXPES) has been used to study the structure of buried layers in thin multilayer films. A detailed layer-by-layer investigation was performed using the element-specific, local-probe character of XPD....

  • Large contrast enhancement of graphene monolayers by angle detection. Yu, V.; Hilke, M. // Applied Physics Letters;10/12/2009, Vol. 95 Issue 15, p151904 

    Exfoliated graphene monolayers are identified by optical inspection. In order to improve the monolayer detection, we investigate the angle dependence of the optical contrast of graphene on a 90 nm SiO2/Si substrate. We observe a significant enhancement of the visibility of graphene by changing...

  • Soluble axially substituted phthalocyanines: Synthesis and nonlinear optical response. Yu Chen; Hanack, Michael; Blau, Werner; Dini, Danilo; Ying Liu; Ying Lin; Jinrui Bai // Journal of Materials Science;Apr2006, Vol. 41 Issue 8, p2169 

    This review lays special stress on describing the synthesis of soluble axially substituted or bridged indium, gallium and titanium phthalocyanine complexes and their electronic absorption characteristics, photophysical and nonlinear optical properties. The enhanced solubility of the axially...

Share

Read the Article

Courtesy of VIRGINIA BEACH PUBLIC LIBRARY AND SYSTEM

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics