TITLE

Temperature-dependent Hall and photoluminescence evidence for conduction-band edge shift induced by alloying ZnO with magnesium

AUTHOR(S)
Pan, X. H.; Guo, W.; Ye, Z. Z.; Liu, B.; Che, Y.; Tian, W.; Schlom, D. G.; Pan, X. Q.
PUB. DATE
October 2009
SOURCE
Applied Physics Letters;10/12/2009, Vol. 95 Issue 15, p152105
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
This work discusses the effect of conduction-band edge shift induced by alloying ZnO with magnesium. Temperature-dependent Hall and temperature-dependent photoluminescence measurements are used to characterize the epitaxial Zn1-xMgxO thin films grown on (111) Si using intervening epitaxial Lu2O3 buffer layers, which prove that the addition of Mg in ZnO shifts the conduction-band edge to higher energy, thus increasing the activation energy of the defect donor states and reducing the n-type background carrier concentration.
ACCESSION #
44665197

 

Related Articles

  • On the origin of blue-green luminescence in spray pyrolysed ZnO thin films. Ratheesh Kumar, P. M.; Vijayakumar, K. P.; Sudha Kartha, C. // Journal of Materials Science;Apr2007, Vol. 42 Issue 8, p2598 

    Origin of the well-known blue-green emission of spray pyrolysed ZnO thin films has been discussed on the basis of variation of the properties due to different treatment of the samples such as ion beam irradiation and doping. 120 MeV Au ions and 80 MeV Ni ions were used for ion beam irradiation...

  • Study of the photoluminescence of phosphorus-doped p-type ZnO thin films grown by radio-frequency magnetron sputtering. Dae-Kue Hwang; Hyun-Sik Kim; Jae-Hong Lim; Jin-Yong Oh; Jin-Ho Yang; Seong-Ju Park; Kyoung-Kook Kim; Look, D. C.; Park, Y. S. // Applied Physics Letters;4/11/2005, Vol. 86 Issue 15, p151917 

    Phosphorus-doped p-type ZnO thin films were grown on sapphire by radio-frequency magnetron sputtering. The photoluminescence (PL) spectra revealed an acceptor bound exciton peak at 3.355 eV and a conduction band to the acceptor transition caused by a phosphorus related level at 3.310 eV. A study...

  • Control of p- and n-type conductivities in P doped ZnO thin films by using radio-frequency sputtering. Zhi Gen Yu; Ping Wu; Hao Gong // Applied Physics Letters;3/27/2006, Vol. 88 Issue 13, p132114 

    The conduction type of P doped ZnO thin films using Zn3P2 dopant source can be controlled by adjusting the oxygen partial pressure by means of radio-frequency sputtering. Under an optimal oxygen partial pressure of 5%, p-type ZnO thin films were obtained with a hole concentration of...

  • Preferred C-axis oriented photoluminescent ZnO thin films prepared by RF magnetron sputtering. Mondal, Praloy; Das, Debajyoti // AIP Conference Proceedings;Feb2013, Vol. 1512 Issue 1, p644 

    Undoped ZnO thin films were prepared by RF magnetron sputtering at 300° C. High value of optical transparency, distinct (002) preferential crystallographic orientation, high growth rate, good electrical conductivity and surface roughness are obtained at 200 W of RF power. XRD and Raman...

  • Photoluminescence dependence of ZnO films grown on Si(100) by radio-frequency magnetron sputtering on the growth ambient. Jeong, Sang-Hun; Kim, Bong-Soo; Lee, Byung-Teak // Applied Physics Letters;4/21/2003, Vol. 82 Issue 16, p2625 

    We report the effects of the growth ambient on photoluminescence (PL) emission properties of ZnO films grown on Si (100) by rf magnetron sputtering. Upon increasing the O[SUB2] /Ar + O[SUB2] ratio in the growing ambient, the visible emission in the room-temperature PL spectra was drastically...

  • Ultraviolet and visible photoresponse properties of n-ZnO/p-Si heterojunction. Mridha, S.; Basak, D. // Journal of Applied Physics;4/15/2007, Vol. 101 Issue 8, p083102 

    A n-ZnO/p-Si thin film heterojunction has been fabricated by a low cost sol-gel technique. The wavelength dependent photoresponse properties of the heterojunction is investigated in detail by studying the effect of light illumination on current-voltage (I-V) characteristics, photocurrent, and...

  • Substrate temperature dependent physical properties of sprayed Zn0.76Mg0.24O films. Prathap, P.; Reddy, A. Suryanarayana; Revathi, N.; Subbaiah, Y. P. Venkata; Reddy, K. T.Ramakrishna // Journal of Materials Science: Materials in Electronics;Apr2010, Vol. 21 Issue 4, p393 

    The composition, microstructural and opto-electronic properties of Zn1− xMg xO thin films grown by spray pyrolysis have been studied. The films were prepared on glass substrates at different substrate temperatures in the range, 200–350 °C for a fixed magnesium composition of x =...

  • Investigation on the p-type formation mechanism of arsenic doped p-type ZnO thin film. Hong Seong Kang; Gun Hee Kim; Dong Lim Kim; Hyun Woo Chang; Byung Du Ahn; Sang Yeol Lee // Applied Physics Letters;10/30/2006, Vol. 89 Issue 18, p181103 

    The photoluminescence spectra of As doped p-type ZnO thin films reveal neutral acceptor bound exciton of 3.3437 eV and a transition between free electrons and acceptor levels of 3.2924 eV. Calculated acceptor binding energy is about 0.1455 eV. Thermal activation and doping mechanism of this film...

  • Excitonic Properties of ZnO Films and Nanorods. Toropov, A. A.; Nekrutkina, O. V.; Shubina, T. V.; Ivanov, S. V.; Gruber, Th.; Kling, R.; Reuss, F.; Kirchner, C.; Waag, A.; Karlsson, K. F.; Bergman, J. P.; Monemar, B. // AIP Conference Proceedings;2005, Vol. 772 Issue 1, p991 

    We report on the comparative studies of linearly polarized photoluminescence (PL) in a ZnO epitaxial film and ZnO nanorods. At low temperatures the PL spectrum of both samples included a number of narrow lines attributed to donor-bound excitons and a peak of free A excitons. An additional line...

Share

Read the Article

Courtesy of VIRGINIA BEACH PUBLIC LIBRARY AND SYSTEM

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics