Temperature-dependent Hall and photoluminescence evidence for conduction-band edge shift induced by alloying ZnO with magnesium

Pan, X. H.; Guo, W.; Ye, Z. Z.; Liu, B.; Che, Y.; Tian, W.; Schlom, D. G.; Pan, X. Q.
October 2009
Applied Physics Letters;10/12/2009, Vol. 95 Issue 15, p152105
Academic Journal
This work discusses the effect of conduction-band edge shift induced by alloying ZnO with magnesium. Temperature-dependent Hall and temperature-dependent photoluminescence measurements are used to characterize the epitaxial Zn1-xMgxO thin films grown on (111) Si using intervening epitaxial Lu2O3 buffer layers, which prove that the addition of Mg in ZnO shifts the conduction-band edge to higher energy, thus increasing the activation energy of the defect donor states and reducing the n-type background carrier concentration.


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