Nanowires formation and the origin of ferromagnetism in a diluted magnetic oxide

Vidal, F.; Zheng, Y.; Milano, J.; Demaille, D.; Schio, P.; Fonda, E.; Vodungbo, B.
October 2009
Applied Physics Letters;10/12/2009, Vol. 95 Issue 15, p152510
Academic Journal
The ferromagnetic response from Co-doped CeO2 epilayers is shown to be linked to the formation of Co metallic nanowires (diameters in the 3–7 nm range) within the oxide matrix. These results (i) illustrate the key role of the shape anisotropy of metallic inclusions in diluted magnetic oxides (DMO), (ii) stress the importance to monitor the out-of-plane response of DMO, and (iii) suggest that some dilute systems previously thought to be intrinsic ferromagnet may be reexamined.


Related Articles

  • Magnetic anisotropy in vertically aligned diluted magnetic Mn:Ge semiconductor nanowires. Kim, Ungkil; Park, Tae-Eon; Kim, Ilsoo; Seong, Han-Kyu; Kim, Myeong-Ha; Chang, Joonyeon; Park, Jae-Gwan; Choi, Heon-Jin // Journal of Applied Physics;Dec2009, Vol. 106 Issue 12, p123903-1 

    Semiconductors doped with magnetic ion, the so-called diluted magnetic semiconductors, are promising candidates for spintronics. Herein, we report on magnetic anisotropy in Mn:Ge diluted magnetic semiconductor nanowires. We grew single crystal Mn:Ge nanowires vertically on a Ge substrate and...

  • Statistical fluctuation of magnetization in Mn-composition modulated Cd1-xMnxTe quantum wires. Harada, Yukihiro; Kita, Takashi; Wada, Osamu; Ando, Hiroaki // Journal of Applied Physics;Feb2010, Vol. 107 Issue 4, p043521 

    We have theoretically studied the emission-line width in Mn-composition modulated Cd1-xMnxTe quantum wires by using the multiband effective mass theory and fluctuation-dissipation theorem. The calculated emission-line width exhibits a broadening because of a statistical fluctuation in the...

  • Structural, optical, and magnetic properties of As-doped (Zn0.93Mn0.07)O thin films. Sejoon Lee; Deuk Young Kim; Yoon Shon; Yoon, Chong S. // Applied Physics Letters;7/10/2006, Vol. 89 Issue 2, p022120 

    The As-doped (Zn0.93Mn0.07)O thin film prepared by As+ ion implantation showed a clear peak of (A0,X) having acceptor binding energy of 181 meV. The sample showed high TC ferromagnetism persisting up to 285 K. The contribution of magnetization from Mn ion at 280 K was determined to be...

  • Low-Temperature Ferromagnetism in a New Diluted Magnetic Semiconductor Bi[sub 2 – ][sub x]Fe[sub x]Te[sub 3]. Kul’bachinskiı, V. A.; Kaminskiı, A. Yu.; Kindo, K.; Narumi, Y.; Suga, K.; Lostak, P.; Svanda, P. // JETP Letters;4/10/2001, Vol. 73 Issue 7, p352 

    Single crystals of a new diluted magnetic semiconductor Bi[sub 2 – ][sub x]Fe[sub x]Te[sub 3] (0≤x≤0.08) were grown. For all crystals, the transition into a ferromagnetic state with easy axis parallel to the C[sub 3] axis was observed at temperature T[sub c] increasing with...

  • Spin-glass properties in the dilute semiconductor Sn1-x MnxTe. Escorne, M.; Godinho, M.; Tholence, J. L.; Mauger, A. // Journal of Applied Physics;4/15/1985, Vol. 57 Issue 8, p3424 

    Presents information on a study that examined magnetic properties of the ferromagnetic semiconductor, Tin[sub1-x]Manganese[subx]tellurium. Experimental procedures; Conclusions.

  • Dilute magnetic semiconductor nanowires. Kulkarni, J. S.; Kazakova, O.; Holmes, J. D. // Applied Physics A: Materials Science & Processing;Nov2006, Vol. 85 Issue 3, p277 

    Semiconductor materials form the basis of modern electronics, communication, data storage and computing technologies. One of today’s challenges for the development of future technologies is the realization of devices that control not only the electron charge, as in present electronics,...

  • Ferromagnetism in Mn-implanted Ge/Si Nanostructure Material. Yoon, I. T.; Park, C. J.; Kang, T. W. // Journal of Superconductivity & Novel Magnetism;Jan2010, Vol. 23 Issue 1, p115 

    Multistacked Ge quantum dots (QDs) with Si spacers of different thicknesses have been grown on (100) Si substrates by rapid thermal chemical vapor deposition followed by Mn ion implantation and post-annealing. The presence of ferromagnetic structure was confirmed in the insulating...

  • Ferromagnetism in Gd doped ZnO nanowires: A first principles study. Aravindh, S. Assa; Schwingenschloegl, Udo; Roqan, Iman S. // Journal of Applied Physics;2014, Vol. 116 Issue 23, p233906-1 

    In several experimental studies, room temperature ferromagnetism in Gd-doped ZnO nanostructures has been achieved. However, the mechanism and the origin of the ferromagnetism remain controversial. We investigate the structural, magnetic, and electronic properties of Zn48O48 nanowires doped with...

  • Anisotropy of a hole magnetic polaron in a semimagnetic semiconductor. Linnik, T. L.; Rubo, Yu. G.; Sheka, V. I. // JETP Letters;2/10/96, Vol. 63 Issue 3, p222 

    It is shown that the shape of a hole magnetic polaron in a semimagnetic semiconductor with the sphalerite structure is anisotropic: The polaron is strongly oblate in the direction of its magnetic moment. When the anisotropy of the hole spectrum is taken into account, the properties of the...


Read the Article


Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics